Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Hongchao Zhang; Xiangyue Ma; Chuanpeng Jiang; Jialiang Yin; Shuqin Lyu; Shiyang Lu; Xiantao Shang; Bowen Man; Cong Zhang; Dandan Li; Shuhui Li; Wenjing Chen; Hongxi Liu; Gefei Wang; Kaihua Cao; Zhaohao Wang; Weisheng Zhao

doi:10.1088/1674-4926/43/10/102501

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Hongchao Zhang
, Xiangyue Ma
, Chuanpeng Jiang
, Jialiang Yin
, Shuqin Lyu
, Shiyang Lu
, Xiantao Shang
, Bowen Man
, Cong Zhang
, Dandan Li
, Shuhui Li
, Wenjing Chen
, Hongxi Liu^*
, Gefei Wang^*
, Kaihua Cao^*
, Zhaohao Wang
, Weisheng Zhao

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

Original language	English
Article number	102501
Journal	Journal of Semiconductors
Volume	43
Issue number	10
DOIs	https://doi.org/10.1088/1674-4926/43/10/102501
State	Published - Oct 2022

Keywords

200-mm-wafer platform
data retention
endurance
low switching current densities
SOT MTJ

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10.1088/1674-4926/43/10/102501

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Zhang, H., Ma, X., Jiang, C., Yin, J., Lyu, S., Lu, S., Shang, X., Man, B., Zhang, C., Li, D., Li, S., Chen, W., Liu, H., Wang, G., Cao, K., Wang, Z., & Zhao, W. (2022). Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform. Journal of Semiconductors, 43(10), Article 102501. https://doi.org/10.1088/1674-4926/43/10/102501

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title = "Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform",

abstract = "We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.",

keywords = "200-mm-wafer platform, data retention, endurance, low switching current densities, SOT MTJ",

author = "Hongchao Zhang and Xiangyue Ma and Chuanpeng Jiang and Jialiang Yin and Shuqin Lyu and Shiyang Lu and Xiantao Shang and Bowen Man and Cong Zhang and Dandan Li and Shuhui Li and Wenjing Chen and Hongxi Liu and Gefei Wang and Kaihua Cao and Zhaohao Wang and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2021 Chinese Institute of Electronics.",

year = "2022",

month = oct,

doi = "10.1088/1674-4926/43/10/102501",

language = "英语",

volume = "43",

journal = "Journal of Semiconductors",

issn = "1674-4926",

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TY - JOUR

T1 - Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

AU - Zhang, Hongchao

AU - Ma, Xiangyue

AU - Jiang, Chuanpeng

AU - Yin, Jialiang

AU - Lyu, Shuqin

AU - Lu, Shiyang

AU - Shang, Xiantao

AU - Man, Bowen

AU - Zhang, Cong

AU - Li, Dandan

AU - Li, Shuhui

AU - Chen, Wenjing

AU - Liu, Hongxi

AU - Wang, Gefei

AU - Cao, Kaihua

AU - Wang, Zhaohao

AU - Zhao, Weisheng

PY - 2022/10

Y1 - 2022/10

N2 - We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

AB - We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

KW - 200-mm-wafer platform

KW - data retention

KW - endurance

KW - low switching current densities

KW - SOT MTJ

UR - https://www.scopus.com/pages/publications/85142372171

U2 - 10.1088/1674-4926/43/10/102501

DO - 10.1088/1674-4926/43/10/102501

M3 - 文章

AN - SCOPUS:85142372171

SN - 1674-4926

VL - 43

JO - Journal of Semiconductors

JF - Journal of Semiconductors

IS - 10

M1 - 102501

ER -

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

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Keywords

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