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Insitu growth of BiVO4/HoVO4 heterojunction with O[sbnd]O bond connection for enhanced photodegradation activity

  • Qi He
  • , Jiandi Xin
  • , Liang Mao*
  • , Xiaoyan Cai
  • , Bangfu Ding
  • , Lei Zhang
  • , Junying Zhang
  • , Shukai Zheng
  • , Yanmin Yang
  • *Corresponding author for this work
  • College of Electron and Information Engineering
  • College of Civil Engineering and Architecture
  • China University of Mining and Technology
  • Hebei University

Research output: Contribution to journalArticlepeer-review

Abstract

Heterojunction composite plays an important role in enhancing photocatalysis activity through inhibit electron-hole recombination. In this paper, biphasic heterojunction BiVO4 and HoVO4 is insitu-grown and characterized through XRD, TEM, Raman, SEM, EDS, and XPS. These two structures form n type staggered band configuration using Mott-Schottky and DRS. Rhodamine B (RhB) photodegradation efficiency of the optimal sample is 90.7% after 90 min, higher than single BiVO4 54% and HoVO4 34.5%. The main reason is ascribed to fast photogenerated charge separation via O[sbnd]O bond connection according to photoluminescence, photocurrent response, and theory calculation. The RhB degradation path is revealed from intermediate products identification. Therefore this study unveils photodegradation dyes application of BiVO4/HoVO4 samples.

Original languageEnglish
Article number128952
JournalMaterials Letters
Volume284
DOIs
StatePublished - 1 Feb 2021

Keywords

  • Lattice matching
  • Monocline BiVO
  • O[sbnd]O bond connection
  • Photodegradation RhB
  • Tetragonal HoVO

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