@inproceedings{620c4d232bc84e9289fb9256e52a35f7,
title = "Infrared Thermal Imaging-Based Power MOSFET Thermal Resistance Test Method Research",
abstract = "Based on the high-precision infrared thermal imaging camera, the calibration effect of black paint coating on the emissivity and temperature measurement results was investigated. We developed a set of device junction temperature test schemes with reduced error, utilizing the Infrascope TM-HST hot spot detection system. Experimental tests were conducted to verify the repeatability of the thermal resistance measurement results obtained from the devised scheme. Based on the structure-function theory, the junction temperature drop curve is obtained by using the determined test scheme, and the integral structure function curve of the device is analyzed to determine the thermal resistance parameters of each structural layer of the device under test. The results demonstrate the practicality and effectiveness of using the structure function method to analyze the thermal resistance parameters of power MOSFETs.",
keywords = "infrared thermal imaging, power devices, structure-function, thermal resistance",
author = "Hongming Shao and Sujuan Zhang and Bo Wan and Ye Wang and Mengxiang Long",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 14th IEEE Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023 ; Conference date: 12-10-2023 Through 15-10-2023",
year = "2023",
doi = "10.1109/PHM-HANGZHOU58797.2023.10482662",
language = "英语",
series = "2023 Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Wei Guo and Steven Li",
booktitle = "2023 Global Reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023",
address = "美国",
}