Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan; David Bérardan; Lidong Zhao; Céline Barreteau; Nita Dragoe

doi:10.1063/1.4775593

Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan^*
, David Bérardan
, Lidong Zhao
, Céline Barreteau
, Nita Dragoe

^*Corresponding author for this work

Institut de Chimie Moléculaire et des Matériaux d'Orsay

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi_1-xPb_xCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi_1- _xPb_xCuSeO (x = 0.03) reaches 5.3 μW cm^-1 K^-2 at 873 K. The influence of Pb²⁺ doping on the electronic structure is the same as the one obtained with Sr²⁺, however, the decrease of the holes mobility is reduced as compared to Sr ²⁺ doping, which could be beneficial to the thermoelectric performances.

Original language	English
Article number	023902
Journal	Applied Physics Letters
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.4775593
State	Published - 14 Jan 2013
Externally published	Yes

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title = "Influence of Pb doping on the electrical transport properties of BiCuSeO",

abstract = "The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.",

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T1 - Influence of Pb doping on the electrical transport properties of BiCuSeO

AU - Pan, Lin

AU - Bérardan, David

AU - Zhao, Lidong

AU - Barreteau, Céline

AU - Dragoe, Nita

PY - 2013/1/14

Y1 - 2013/1/14

N2 - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

AB - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

UR - https://www.scopus.com/pages/publications/84872716961

U2 - 10.1063/1.4775593

DO - 10.1063/1.4775593

M3 - 文章

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SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

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ER -

Influence of Pb doping on the electrical transport properties of BiCuSeO

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