Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films

Yibin Li; Sam Zhang; Thirumany Sritharan; Yang Liu; T. P. Chen

doi:10.1016/j.jallcom.2007.03.095

Influence of oxygen partial pressure on magnetron sputtered Sr_0.8Nd_0.3Bi_2.5Ta₂O_9+x ferroelectric thin films

Yibin Li
, Sam Zhang^*
, Thirumany Sritharan
, Yang Liu
, T. P. Chen

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

During magnetron sputtering deposition of SrBi₂Ta₂O₉ thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr_0.8Nd_0.3Bi_2.5Ta₂O_9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd³⁺ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr²⁺ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure.

Original language	English
Pages (from-to)	549-554
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	457
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.03.095
State	Published - 12 Jun 2008
Externally published	Yes

Keywords

Magnetron sputtering
Oxygen partial pressure
Polarization property
SrBiTaO thin film
Substitution

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10.1016/j.jallcom.2007.03.095

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title = "Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films",

abstract = "During magnetron sputtering deposition of SrBi2Ta2O9 thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr0.8Nd0.3Bi2.5Ta2O9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd3+ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure.",

keywords = "Magnetron sputtering, Oxygen partial pressure, Polarization property, SrBiTaO thin film, Substitution",

author = "Yibin Li and Sam Zhang and Thirumany Sritharan and Yang Liu and Chen, \{T. P.\}",

year = "2008",

month = jun,

day = "12",

doi = "10.1016/j.jallcom.2007.03.095",

language = "英语",

volume = "457",

pages = "549--554",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

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TY - JOUR

T1 - Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films

AU - Li, Yibin

AU - Zhang, Sam

AU - Sritharan, Thirumany

AU - Liu, Yang

AU - Chen, T. P.

PY - 2008/6/12

Y1 - 2008/6/12

N2 - During magnetron sputtering deposition of SrBi2Ta2O9 thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr0.8Nd0.3Bi2.5Ta2O9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd3+ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure.

AB - During magnetron sputtering deposition of SrBi2Ta2O9 thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr0.8Nd0.3Bi2.5Ta2O9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd3+ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure.

KW - Magnetron sputtering

KW - Oxygen partial pressure

KW - Polarization property

KW - SrBiTaO thin film

KW - Substitution

UR - https://www.scopus.com/pages/publications/42649128085

U2 - 10.1016/j.jallcom.2007.03.095

DO - 10.1016/j.jallcom.2007.03.095

M3 - 文章

AN - SCOPUS:42649128085

SN - 0925-8388

VL - 457

SP - 549

EP - 554

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Influence of oxygen partial pressure on magnetron sputtered Sr_0.8Nd_0.3Bi_2.5Ta₂O_9+x ferroelectric thin films

Abstract

Keywords

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