Influence of nitrification methods upon optical and electrical properties of ITO films

Two nitrification methods were used to modify the ITO films prepared by r.f. magnetron sputtering-(l) the films were prepared in room temperature using argon as the sputtering gases, and were annealed in ammonia and nitrogen atmosphere respectively; (2) the films were prepared use mixed argon and nitrogen as the sputtering gases. The effect of these two methods on electrical and optical properties of ITO films was studied using X-ray diffraction (XRD), Hall effect and UV-vis-NIR spectrometer. The transmittance of ITO films prepared in room temperature in visible region is greatly improved by both methods. The electrical properties and crystallization of the films are greatly improved by the first method, but are reduced by the second one. The UV-vis-NIR spectrum of ITO films shows red-shift phenomena by the second method.