Inductively coupled plasma etching of in1-x-yal xgayas In bcl3/cl2/ar

Jinhua Ning; Kefeng Zhang; Hengjing Tang; Yang Wang; Xue Li; Haimei Gong

doi:10.1117/12.803196

Inductively coupled plasma etching of in_1-x-yal _xga_yas In bcl₃/cl₂/ar

Jinhua Ning^*
, Kefeng Zhang
, Hengjing Tang
, Yang Wang
, Xue Li
, Haimei Gong

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

In this paper, dry etching of In_0.8Al_0.2As/In _0.8Ga_0.2As/In_1-xAl_xAs (In _1-x-yAl_x3sGa_yAs) epitaxy material was studied in BCI₃/CI₂/AJ inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCI₃/CI₂/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in CI₂ dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCI₃ increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InCl_x etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

Original language	English
Article number	71353I
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7135
DOIs	https://doi.org/10.1117/12.803196
State	Published - 2008
Externally published	Yes
Event	Optoelectronic Materials and Devices III - Hangzhou, China Duration: 27 Oct 2008 → 30 Oct 2008

Keywords

Bcl/cl/ar
ICP
InGaAs
Inalas

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10.1117/12.803196

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@article{59a84cfbaf4f4848b9a48b69779c24e3,

title = "Inductively coupled plasma etching of in1-x-yal xgayas In bcl3/cl2/ar",

abstract = "In this paper, dry etching of In0.8Al0.2As/In 0.8Ga0.2As/In1-xAlxAs (In 1-x-yAlx3sGayAs) epitaxy material was studied in BCI3/CI2/AJ inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCI3/CI2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in CI2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCI3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.",

keywords = "Bcl/cl/ar, ICP, InGaAs, Inalas",

author = "Jinhua Ning and Kefeng Zhang and Hengjing Tang and Yang Wang and Xue Li and Haimei Gong",

year = "2008",

doi = "10.1117/12.803196",

language = "英语",

volume = "7135",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optoelectronic Materials and Devices III ; Conference date: 27-10-2008 Through 30-10-2008",

}

TY - JOUR

T1 - Inductively coupled plasma etching of in1-x-yal xgayas In bcl3/cl2/ar

AU - Ning, Jinhua

AU - Zhang, Kefeng

AU - Tang, Hengjing

AU - Wang, Yang

AU - Li, Xue

AU - Gong, Haimei

PY - 2008

Y1 - 2008

N2 - In this paper, dry etching of In0.8Al0.2As/In 0.8Ga0.2As/In1-xAlxAs (In 1-x-yAlx3sGayAs) epitaxy material was studied in BCI3/CI2/AJ inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCI3/CI2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in CI2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCI3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

AB - In this paper, dry etching of In0.8Al0.2As/In 0.8Ga0.2As/In1-xAlxAs (In 1-x-yAlx3sGayAs) epitaxy material was studied in BCI3/CI2/AJ inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCI3/CI2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in CI2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCI3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

KW - Bcl/cl/ar

KW - ICP

KW - InGaAs

KW - Inalas

UR - https://www.scopus.com/pages/publications/62649125814

U2 - 10.1117/12.803196

DO - 10.1117/12.803196

M3 - 会议文章

AN - SCOPUS:62649125814

SN - 0277-786X

VL - 7135

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 71353I

T2 - Optoelectronic Materials and Devices III

Y2 - 27 October 2008 through 30 October 2008

ER -

Inductively coupled plasma etching of in_1-x-yal _xga_yas In bcl₃/cl₂/ar

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Keywords

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