TY - GEN
T1 - Inductive Effect-Aware Power Distribution Network Modeling and Analysis for Heterogeneous 3D Integrated Circuits
AU - Wang, Quansen
AU - Pavlidis, Vasilis F.
AU - Feng, Xuning
AU - Wang, Rui
AU - Zhang, Wei
AU - Cheng, Yuanqing
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - CMOS scaling is now entering a challenging phase due to issues with lithography and device physics. Heterogeneous 3D integration technology is a cost-effective and highperformance alternative to planar integrated circuits (ICs). In this paper, we propose an on-chip power distribution network (PDN) model for heterogeneous 3D-ICs (H3D-ICs), which explicitly takes the effects of on-chip inductance into account. With this model, we can perform both transient and AC simulations efficiently. As the inductive effect is included in our model, it can also provide a precise assessment of the noise characteristics of H3D-ICs at elevated frequencies and can better answer 'whatif' type questions for design space exploration in the early PDN design stage. The model is validated through HSPICE, demonstrating a maximum error of less than 1%. It also shows an average increase of 1.5 x in transient simulation speed and an average enhancement of 8.5 x in AC simulation speed. The paper also investigates the effects of die stacking order and through silicon via (TSV) count on power supply noise (PSN) in H3D-ICs. With the proposed model, the impacts of die stacking order and TSV density on PSN can be evaluated effectively and efficiently.
AB - CMOS scaling is now entering a challenging phase due to issues with lithography and device physics. Heterogeneous 3D integration technology is a cost-effective and highperformance alternative to planar integrated circuits (ICs). In this paper, we propose an on-chip power distribution network (PDN) model for heterogeneous 3D-ICs (H3D-ICs), which explicitly takes the effects of on-chip inductance into account. With this model, we can perform both transient and AC simulations efficiently. As the inductive effect is included in our model, it can also provide a precise assessment of the noise characteristics of H3D-ICs at elevated frequencies and can better answer 'whatif' type questions for design space exploration in the early PDN design stage. The model is validated through HSPICE, demonstrating a maximum error of less than 1%. It also shows an average increase of 1.5 x in transient simulation speed and an average enhancement of 8.5 x in AC simulation speed. The paper also investigates the effects of die stacking order and through silicon via (TSV) count on power supply noise (PSN) in H3D-ICs. With the proposed model, the impacts of die stacking order and TSV density on PSN can be evaluated effectively and efficiently.
KW - 3D heterogeneous integration
KW - Power delivery network
KW - modeling and analysis
KW - on-chip inductance
UR - https://www.scopus.com/pages/publications/105016242822
U2 - 10.1109/ISVLSI65124.2025.11130269
DO - 10.1109/ISVLSI65124.2025.11130269
M3 - 会议稿件
AN - SCOPUS:105016242822
T3 - Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
BT - IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2025 - Conference Proceedings
PB - IEEE Computer Society
T2 - 28th IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2025
Y2 - 6 July 2025 through 9 July 2025
ER -