In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

He Tian; Haiming Zhao; Xue Feng Wang; Qian Yi Xie; Hong Yu Chen; Mohammad Ali Mohammad; Cheng Li; Wen Tian Mi; Zhi Bie; Chao Hui Yeh; Yi Yang; H. S.Philip Wong; Po Wen Chiu; Tian Ling Ren

doi:10.1002/adma.201503125

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

He Tian
, Haiming Zhao
, Xue Feng Wang
, Qian Yi Xie
, Hong Yu Chen
, Mohammad Ali Mohammad
, Cheng Li
, Wen Tian Mi
, Zhi Bie
, Chao Hui Yeh
, Yi Yang
, H. S.Philip Wong^*
, Po Wen Chiu
, Tian Ling Ren

^*Corresponding author for this work

Tsinghua University
Stanford University
National Tsing Hua University

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

Original language	English
Pages (from-to)	7767-7774
Number of pages	8
Journal	Advanced Materials
Volume	27
Issue number	47
DOIs	https://doi.org/10.1002/adma.201503125
State	Published - 16 Dec 2015
Externally published	Yes

Keywords

bilayer graphene
gate controlled
in situ
resistive memory
switching windows

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10.1002/adma.201503125

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title = "In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device",

abstract = "A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.",

keywords = "bilayer graphene, gate controlled, in situ, resistive memory, switching windows",

author = "He Tian and Haiming Zhao and Wang, \{Xue Feng\} and Xie, \{Qian Yi\} and Chen, \{Hong Yu\} and Mohammad, \{Mohammad Ali\} and Cheng Li and Mi, \{Wen Tian\} and Zhi Bie and Yeh, \{Chao Hui\} and Yi Yang and Wong, \{H. S.Philip\} and Chiu, \{Po Wen\} and Ren, \{Tian Ling\}",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = dec,

day = "16",

doi = "10.1002/adma.201503125",

language = "英语",

volume = "27",

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journal = "Advanced Materials",

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T1 - In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

AU - Tian, He

AU - Zhao, Haiming

AU - Wang, Xue Feng

AU - Xie, Qian Yi

AU - Chen, Hong Yu

AU - Mohammad, Mohammad Ali

AU - Li, Cheng

AU - Mi, Wen Tian

AU - Bie, Zhi

AU - Yeh, Chao Hui

AU - Yang, Yi

AU - Wong, H. S.Philip

AU - Chiu, Po Wen

AU - Ren, Tian Ling

PY - 2015/12/16

Y1 - 2015/12/16

N2 - A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

AB - A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

KW - bilayer graphene

KW - gate controlled

KW - in situ

KW - resistive memory

KW - switching windows

UR - https://www.scopus.com/pages/publications/84954401713

U2 - 10.1002/adma.201503125

DO - 10.1002/adma.201503125

M3 - 文章

AN - SCOPUS:84954401713

SN - 0935-9648

VL - 27

SP - 7767

EP - 7774

JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

Abstract

Keywords

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