Improving thermal stability and reliability of power chips by sintering foam structure layer

In order to ensure the high-temperature reliability of device in high temperature service, a new sintered structure layer, nano-Ag paste filling graphene reinforced Ni foam, was designed to realize the chip packaging in this work. This layer had excellent reliability and high-temperature heat dissipation stability, which benefit from the higher proportion of low-angle grain boundaries, finer grains and excellent heat dissipation capacity of graphene. The foam structure had favorable stress release effect, which made the sintered layer had high service reliability. The excellent heat dissipation ability of graphene overcomes the inherent defect of slow heat dissipation of the device under high temperature environment.