@inproceedings{9b2e804e21484b7a85db0bebb1ff2324,
title = "Improvement of the properties of CuInS 2 thin film prepared in sulfate system",
abstract = "For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS 2 thin film, potassium hydrogen phthalate (C 8H 5KO 4), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS 2 thin film was determined by orthogonal experiment method. The effect of C 8H 5KO 4 on the composition and Mott-Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10 19 cm -3; the addition of C 8H 5KO 4 can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.",
keywords = "Complexation, CuInS thin film, Mott-Schottky, Solar cell",
author = "Lin Lu and Xiaogang Li",
year = "2012",
doi = "10.4028/www.scientific.net/AMR.415-417.1611",
language = "英语",
isbn = "9783037853252",
series = "Advanced Materials Research",
pages = "1611--1614",
booktitle = "Advanced Materials",
note = "2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011 ; Conference date: 16-12-2011 Through 18-12-2011",
}