Improved temperature error model of silicon MEMS gyroscope with inside frame driving

Temperature error is one of the main errors for microelectromechanical system (MEMS) gyroscopes. For eliminating temperature error of silicon MEMS gyroscope with inside frame driving, the improved temperature error model of gyroscope was presented. Based on the Seebeek theory of silicon material and the distortion depending on temperature of microstructure, the bias error was analyzed. The interferential moment depending on temperature was employed to analyze the error which relates with force and angular acceleration. According to the inherent frequency change depending on temperature, the error of scale factor was analyzed. The experimental results show that the interferential moment which relates with force is primary factor resulting in bias error of gyroscope during temperature change and verifies the accuracy of the theoretical model. The bias stability and scale factor precision of gyroscope compensated by improved temperature error model were improved 53.75 and 19.6 times respectively. The improved temperature error model is applicable to other silicon MEMS gyroscopes.