Abstract
We report the infrared emissions of Er 3+-Tm 3+ co-doped amorphous Al 2O 3 thin films pumped at 791 nm by a Ti:sapphire laser. The as-deposited films were annealed to improve the photoluminescence performance. Three cross relaxation channels among Er 3+-Tm 3+ and Tm 3+-Tm 3+ ions incorporated in the films were investigated as annealing temperature increases especially from 800 to 850 °C. In order to understand the Stark effect and cross relaxations, the photoluminescence spectra were deconvoluted by Gaussian fittings. Our results indicate that the luminescence intensity of 1.62 μm in comparison to 1.5 μm can be enhanced by the cross relaxation process [Er 3+( 4I 13/2)+Tm 3+ ( 3H 6)→Er 3+ ( 4I 15/2)+Tm 3+ ( 3F 4)], and the longer-wavelength side of Er 3+ emission can be improved by the CR process [Er 3+ ( 4I 15/2)+Tm 3+ ( 3H 4).Er 3+ ( 4I 13/2)+Tm 3+ ( 3F 4)] at expense of the Tm 3+ 1.47 μm emission which is also maybe quenched by the CR effect between themselves. These results suggest one possible approach to achieve broadband infrared emissions at the wavelength region of 1.45-1.65 μm from the Er 3+-Tm 3+ co-doped systems.
| Original language | English |
|---|---|
| Pages (from-to) | 10673-10676 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 11 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2011 |
Keywords
- Annealing
- Cross relaxation
- Er -Tm : Al O thin films
- Infrared emission
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