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Implementing Complex Oxides for Efficient Room-Temperature Spin–Orbit Torque Switching

  • Aihua Tang
  • , Teng Xu
  • , Shengsheng Liu
  • , Yuhan Liang
  • , Hetian Chen
  • , Dayu Yan
  • , Youguo Shi
  • , Pu Yu
  • , Rong Yu
  • , Yuanhua Lin
  • , Tianxiang Nan
  • , Wanjun Jiang*
  • , Di Yi*
  • *Corresponding author for this work
  • Tsinghua University
  • CAS - Institute of Physics

Research output: Contribution to journalArticlepeer-review

Abstract

Complex oxides hosting 4d and 5d cations with significant spin–orbit coupling have recently been shown as promising materials for efficient spin-charge interconversion. Through interfacing 4d and 5d oxides with magnet layers, a large spin–orbit torque (SOT) is reported. However, a room-temperature SOT switching of perpendicular magnetization by using these oxides, which is essential for spintronic devices, is not demonstrated. Here, this is addressed yet missing aspect by studying heterostructures comprised of two representative complex oxides (4d SrRuO3 and 5d SrIrO3) and a compensated ferrimagnet FeGd with perpendicular magnetic anisotropy. A room temperature current-induced SOT switching of perpendicular magnetization in both SrRuO3/FeGd and SrIrO3/FeGd bilayers, with the critical switching current density on the order of 106 A cm−2 is demonstrated. The SOT efficiencies of SrRuO3 and SrIrO3 are further quantified by using harmonic Hall voltage measurements. The results suggest that the strongly correlated oxides could be another promising platform for enabling energy-efficient spin-orbitronic applications.

Original languageEnglish
Article number2200514
JournalAdvanced Electronic Materials
Volume8
Issue number11
DOIs
StatePublished - Nov 2022
Externally publishedYes

Keywords

  • perpendicular magnetization switching
  • spin–orbit torque
  • transition metal oxide

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