TY - GEN
T1 - Impact of Heavy Ions Irradiation Effect on Magnetic Devices
AU - Wang, Hanbin
AU - Wang, Min
AU - Wang, Chenyi
AU - Wang, Zhaohao
AU - Zhao, Yuanfu
AU - Wang, Bi
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Magnetic random access memory (MRAM) is considered a potential candidate for next-generation memory due to its high density, high access speed, and high endurance. Compared with the previous two generations, the third-generation spin-orbit moment (SOT)-MRAM is more reliable and complex, and adequate irradiation effect studies are required before its application in aerospace. In this paper, the effect of heavy ion irradiation on the performance of SOT magnetic dot devices and SOT spin Hall devices is investigated. The results show that when the irradiated ion flux reaches 107 ions/cm2, the magnetic dot device has good robustness to the Ta+ ion beam of 1912 MeV, and the critical flip current of the spin Hall device undergoes a shift of about 16.7% after irradiation.
AB - Magnetic random access memory (MRAM) is considered a potential candidate for next-generation memory due to its high density, high access speed, and high endurance. Compared with the previous two generations, the third-generation spin-orbit moment (SOT)-MRAM is more reliable and complex, and adequate irradiation effect studies are required before its application in aerospace. In this paper, the effect of heavy ion irradiation on the performance of SOT magnetic dot devices and SOT spin Hall devices is investigated. The results show that when the irradiated ion flux reaches 107 ions/cm2, the magnetic dot device has good robustness to the Ta+ ion beam of 1912 MeV, and the critical flip current of the spin Hall device undergoes a shift of about 16.7% after irradiation.
KW - Hall bar
KW - Heavy ions
KW - magnetic dot
KW - perpendicular magnetic anisotropy (PMA)
UR - https://www.scopus.com/pages/publications/105032368813
U2 - 10.1109/RADECS61970.2024.11298597
DO - 10.1109/RADECS61970.2024.11298597
M3 - 会议稿件
AN - SCOPUS:105032368813
T3 - 2024 24th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2024 - Proceedings
BT - 2024 24th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2024
Y2 - 16 September 2024 through 20 September 2024
ER -