Identification and application of current compliance failure phenomenon in RRAM device

B. Gao; W. Y. Chang; B. Sun; H. W. Zhang; L. F. Liu; X. Y. Liu; R. Q. Han; T. B. Wu; J. F. Kang

doi:10.1109/VTSA.2010.5488912

Identification and application of current compliance failure phenomenon in RRAM device

B. Gao^*
, W. Y. Chang
, B. Sun
, H. W. Zhang
, L. F. Liu
, X. Y. Liu
, R. Q. Han
, T. B. Wu
, J. F. Kang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance failure. The different switching behaviors measured by the current sweep mode could be used as a criterion for distinguishing the RRAM devices from the applications of 1D1R or multilevel storage.

Original language	English
Title of host publication	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages	144-145
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488912
State	Published - 2010
Externally published	Yes
Event	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China Duration: 26 Apr 2010 → 28 Apr 2010

Publication series

Name	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/Territory	Taiwan, Province of China
City	Hsin Chu
Period	26/04/10 → 28/04/10

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10.1109/VTSA.2010.5488912

Cite this

Gao, B., Chang, W. Y., Sun, B., Zhang, H. W., Liu, L. F., Liu, X. Y., Han, R. Q., Wu, T. B., & Kang, J. F. (2010). Identification and application of current compliance failure phenomenon in RRAM device. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 144-145). Article 5488912 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488912

@inproceedings{44e1e081104040f3bf94a7d0af1a9cca,

title = "Identification and application of current compliance failure phenomenon in RRAM device",

abstract = "A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance failure. The different switching behaviors measured by the current sweep mode could be used as a criterion for distinguishing the RRAM devices from the applications of 1D1R or multilevel storage.",

author = "B. Gao and Chang, \{W. Y.\} and B. Sun and Zhang, \{H. W.\} and Liu, \{L. F.\} and Liu, \{X. Y.\} and Han, \{R. Q.\} and Wu, \{T. B.\} and Kang, \{J. F.\}",

year = "2010",

doi = "10.1109/VTSA.2010.5488912",

language = "英语",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "144--145",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Gao, B, Chang, WY, Sun, B, Zhang, HW, Liu, LF, Liu, XY, Han, RQ, Wu, TB & Kang, JF 2010, Identification and application of current compliance failure phenomenon in RRAM device. in Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488912, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, pp. 144-145, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, Taiwan, Province of China, 26/04/10. https://doi.org/10.1109/VTSA.2010.5488912

Identification and application of current compliance failure phenomenon in RRAM device. / Gao, B.; Chang, W. Y.; Sun, B. et al.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 144-145 5488912 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Identification and application of current compliance failure phenomenon in RRAM device

AU - Gao, B.

AU - Chang, W. Y.

AU - Sun, B.

AU - Zhang, H. W.

AU - Liu, L. F.

AU - Liu, X. Y.

AU - Han, R. Q.

AU - Wu, T. B.

AU - Kang, J. F.

PY - 2010

Y1 - 2010

N2 - A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance failure. The different switching behaviors measured by the current sweep mode could be used as a criterion for distinguishing the RRAM devices from the applications of 1D1R or multilevel storage.

AB - A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance failure. The different switching behaviors measured by the current sweep mode could be used as a criterion for distinguishing the RRAM devices from the applications of 1D1R or multilevel storage.

UR - https://www.scopus.com/pages/publications/77957893126

U2 - 10.1109/VTSA.2010.5488912

DO - 10.1109/VTSA.2010.5488912

M3 - 会议稿件

AN - SCOPUS:77957893126

SN - 9781424450633

T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

SP - 144

EP - 145

BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Gao B, Chang WY, Sun B, Zhang HW, Liu LF, Liu XY et al. Identification and application of current compliance failure phenomenon in RRAM device. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 144-145. 5488912. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488912

Identification and application of current compliance failure phenomenon in RRAM device

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