Abstract
A quasiequilibrium evaporation-glow dicharge evaporation source was developed for plasma immersion ion implantation. The relationship between the pressure in the evaporation chamber and the implantation chamber was studied for optimal performance. The results show that hybrid evaporation-glow discharge source is an effective method to produce ions from materials with low melting point and high vapor pressure.
| Original language | English |
|---|---|
| Pages (from-to) | 4301-4304 |
| Number of pages | 4 |
| Journal | Review of Scientific Instruments |
| Volume | 74 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 2003 |
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