Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application

Tian Xiao Nie; Zhi Gang Chen; Mu Tong Niu; Jonathon Wu; Jin Ping Zhang; Yue Qin Wu; Yong Liang Fan; Xin Ju Yang; Zui Min Jiang; Jin Zou

doi:10.1021/jp403588p

Hot-filament-assisted growth of straight SiO_x nanowires for optoelectronic application

Tian Xiao Nie
, Zhi Gang Chen
, Mu Tong Niu
, Jonathon Wu
, Jin Ping Zhang
, Yue Qin Wu
, Yong Liang Fan
, Xin Ju Yang
, Zui Min Jiang^*
, Jin Zou

^*Corresponding author for this work

Fudan University
University of Queensland
CAS - Suzhou Institute of Nano-Tech and Nano-Bionics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Uniform and straight amorphous SiO_x nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiO_x nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiO_x nanowires.

Original language	English
Pages (from-to)	14354-14361
Number of pages	8
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	27
DOIs	https://doi.org/10.1021/jp403588p
State	Published - 11 Jul 2013
Externally published	Yes

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10.1021/jp403588p

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title = "Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application",

abstract = "Uniform and straight amorphous SiOx nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.",

author = "Nie, \{Tian Xiao\} and Chen, \{Zhi Gang\} and Niu, \{Mu Tong\} and Jonathon Wu and Zhang, \{Jin Ping\} and Wu, \{Yue Qin\} and Fan, \{Yong Liang\} and Yang, \{Xin Ju\} and Jiang, \{Zui Min\} and Jin Zou",

year = "2013",

month = jul,

day = "11",

doi = "10.1021/jp403588p",

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journal = "Journal of Physical Chemistry C",

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T1 - Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application

AU - Nie, Tian Xiao

AU - Chen, Zhi Gang

AU - Niu, Mu Tong

AU - Wu, Jonathon

AU - Zhang, Jin Ping

AU - Wu, Yue Qin

AU - Fan, Yong Liang

AU - Yang, Xin Ju

AU - Jiang, Zui Min

AU - Zou, Jin

PY - 2013/7/11

Y1 - 2013/7/11

N2 - Uniform and straight amorphous SiOx nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.

AB - Uniform and straight amorphous SiOx nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.

UR - https://www.scopus.com/pages/publications/84880147354

U2 - 10.1021/jp403588p

DO - 10.1021/jp403588p

M3 - 文章

AN - SCOPUS:84880147354

SN - 1932-7447

VL - 117

SP - 14354

EP - 14361

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 27

ER -

Hot-filament-assisted growth of straight SiO_x nanowires for optoelectronic application

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