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Highly enhanced performance for sensing by monolayer 1T’ WS2 with atomic vacancy

  • Weiqi Wang
  • , Jiamu Cao*
  • , Jing Zhou
  • , Junyu Chen
  • , Junfeng Liu
  • , Huichao Deng
  • , Yufeng Zhang
  • , Xiaowei Liu
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Key Laboratory of Precision Opto-Mechatronics Technology (Ministry of Education)

Research output: Contribution to journalArticlepeer-review

Abstract

Superior gas capture and detection performance play an important role in gas sensing materials. Effects of atomic vacancy defects on intrinsic properties of material are also not negligible. Here we firstly discuss gas adsorption behavior of defective 1T’ WS2 monolayer. We take toxic NO2 gas as an example to compare adsorption effects between defective and perfect 1T'WS2 monolayer. First-principles study based on density functional theory(DFT) is carried out to act as the theoretical basis. These results demonstrate vacancy defects could enhance adsorption stability of 1T’ WS2 monolayer, which provide lower adsorption energy, more charge transfer and more overlaps of density of states. Therefore, vacancy defects make 1T’ WS2 monolayer possess more outstanding surface activity and adsorption performance. This can also offer theoretical support for the improvement of nanomaterials applied in those high performance gas sensing devices.

Original languageEnglish
Article number111215
JournalMicroelectronic Engineering
Volume223
DOIs
StatePublished - 15 Feb 2020

Keywords

  • Atomic vacancy defect
  • First principle
  • Gas sensing
  • Monolayer 1T’ phase WS

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