Highly efficient gas molecule-tunable few-layer GaSe phototransistors

Shengxue Yang; Qu Yue; Hui Cai; Kedi Wu; Chengbao Jiang; Sefaattin Tongay

doi:10.1039/c5tc03459k

Highly efficient gas molecule-tunable few-layer GaSe phototransistors

Shengxue Yang
, Qu Yue
, Hui Cai
, Kedi Wu
, Chengbao Jiang^*
, Sefaattin Tongay

^*Corresponding author for this work

School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W^-1) with high external quantum efficiency (EQE) (∼91.53%), high photocurrent on-off ratio, fast photo-response, and good stability in an O₂ rich environment when illuminated by 254 nm ultraviolet light.

Original language	English
Pages (from-to)	248-253
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	4
Issue number	2
DOIs	https://doi.org/10.1039/c5tc03459k
State	Published - 2016

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title = "Highly efficient gas molecule-tunable few-layer GaSe phototransistors",

abstract = "Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W-1) with high external quantum efficiency (EQE) (∼91.53\%), high photocurrent on-off ratio, fast photo-response, and good stability in an O2 rich environment when illuminated by 254 nm ultraviolet light.",

author = "Shengxue Yang and Qu Yue and Hui Cai and Kedi Wu and Chengbao Jiang and Sefaattin Tongay",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2016.",

year = "2016",

doi = "10.1039/c5tc03459k",

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pages = "248--253",

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T1 - Highly efficient gas molecule-tunable few-layer GaSe phototransistors

AU - Yang, Shengxue

AU - Yue, Qu

AU - Cai, Hui

AU - Wu, Kedi

AU - Jiang, Chengbao

AU - Tongay, Sefaattin

PY - 2016

Y1 - 2016

N2 - Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W-1) with high external quantum efficiency (EQE) (∼91.53%), high photocurrent on-off ratio, fast photo-response, and good stability in an O2 rich environment when illuminated by 254 nm ultraviolet light.

AB - Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W-1) with high external quantum efficiency (EQE) (∼91.53%), high photocurrent on-off ratio, fast photo-response, and good stability in an O2 rich environment when illuminated by 254 nm ultraviolet light.

UR - https://www.scopus.com/pages/publications/84952838232

U2 - 10.1039/c5tc03459k

DO - 10.1039/c5tc03459k

M3 - 文章

AN - SCOPUS:84952838232

SN - 2050-7526

VL - 4

SP - 248

EP - 253

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 2

ER -

Highly efficient gas molecule-tunable few-layer GaSe phototransistors

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