High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

Le Zhi Wang; Xiang Li; Taisuke Sasaki; Kin Wong; Guo Qiang Yu; Shou Zhong Peng; Chao Zhao; Tadakatsu Ohkubo; Kazuhiro Hono; Wei Sheng Zhao; Kang Long Wang

doi:10.1007/s11433-019-1524-y

High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

Le Zhi Wang
, Xiang Li^*
, Taisuke Sasaki
, Kin Wong
, Guo Qiang Yu
, Shou Zhong Peng
, Chao Zhao
, Tadakatsu Ohkubo
, Kazuhiro Hono
, Wei Sheng Zhao
, Kang Long Wang

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

Beihang University
University of California at Los Angeles
Inston Inc.
National Institute for Materials Science Tsukuba
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m², VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

Original language	English
Article number	277512
Journal	Science China: Physics, Mechanics and Astronomy
Volume	63
Issue number	7
DOIs	https://doi.org/10.1007/s11433-019-1524-y
State	Published - 1 Jul 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

71.70.Ej
75.75.+a
85.75.-d
85.75.Dd
85.80.Jm
magnetoelectric (ME) effect
perpendicular magnetic anisotropy
voltage-controlled magnetic anisotropy (VCMA)

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10.1007/s11433-019-1524-y

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Wang, L. Z., Li, X., Sasaki, T., Wong, K., Yu, G. Q., Peng, S. Z., Zhao, C., Ohkubo, T., Hono, K., Zhao, W. S., & Wang, K. L. (2020). High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures. Science China: Physics, Mechanics and Astronomy, 63(7), Article 277512. https://doi.org/10.1007/s11433-019-1524-y

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title = "High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures",

abstract = "Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.",

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doi = "10.1007/s11433-019-1524-y",

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T1 - High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

AU - Wang, Le Zhi

AU - Li, Xiang

AU - Sasaki, Taisuke

AU - Wong, Kin

AU - Yu, Guo Qiang

AU - Peng, Shou Zhong

AU - Zhao, Chao

AU - Ohkubo, Tadakatsu

AU - Hono, Kazuhiro

AU - Zhao, Wei Sheng

AU - Wang, Kang Long

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

AB - Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

KW - 71.70.Ej

KW - 75.75.+a

KW - 85.75.-d

KW - 85.75.Dd

KW - 85.80.Jm

KW - magnetoelectric (ME) effect

KW - perpendicular magnetic anisotropy

KW - voltage-controlled magnetic anisotropy (VCMA)

UR - https://www.scopus.com/pages/publications/85084268792

U2 - 10.1007/s11433-019-1524-y

DO - 10.1007/s11433-019-1524-y

M3 - 文章

AN - SCOPUS:85084268792

SN - 1674-7348

VL - 63

JO - Science China: Physics, Mechanics and Astronomy

JF - Science China: Physics, Mechanics and Astronomy

IS - 7

M1 - 277512

ER -

High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

Abstract

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Keywords

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