High temperature oxidation behavior of Ti₃SiC₂-based material in air

The oxidation behavior of Ti₃SiC₂-based material in air has been studied from 900°C to 1200°C. The present work showed that the growth of the oxide scale on Ti₃SiC₂-based material obeyed a parabolic law from 900°C to 1100°C, while at 1200°C it followed a linear rule. The oxide scale was generally composed of an outer layer of coarse-grained TiO₂ (rutile) and an inner layer of fine-grained TiO₂ and SiO₂ (tridymite) above 1000°C. A discontinuous coarse-grained SiO₂ layer was observed within the outer coarse-grained TiO₂ layer on the samples oxidized at 1100°C and 1200°C. Marker experiments showed that the oxidation process was controlled by the inward diffusion of oxygen, outward diffusion of titanium and CO or SiO, and that internal oxidation predominated. The TiC content in Ti₃SiC₂ was deleterious to the oxidation resistance of Ti₃SiC₂.