High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

Tianqi Gao; Lang Zeng; Deming Zhang; Xiaowan Qin; Mingzhi Long; Youguang Zhang; Weisheng Zhao

doi:10.23919/SISPAD.2017.8085325

High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

Tianqi Gao
, Lang Zeng
, Deming Zhang
, Xiaowan Qin
, Mingzhi Long
, Youguang Zhang
, Weisheng Zhao

Beihang University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme has been proposed, which reduces the energy consumption effectively as well as accelerates switching process.

Original language	English
Title of host publication	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	305-307
Number of pages	3
ISBN (Electronic)	9784863486102
DOIs	https://doi.org/10.23919/SISPAD.2017.8085325
State	Published - 25 Oct 2017
Event	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan Duration: 7 Sep 2017 → 9 Sep 2017

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2017-September

Conference

Conference	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Country/Territory	Japan
City	Kamakura
Period	7/09/17 → 9/09/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

all spin logic device
negative capacitance
voltage controlled magnetic anisotropy

Access to Document

10.23919/SISPAD.2017.8085325

Cite this

Gao, T., Zeng, L., Zhang, D., Qin, X., Long, M., Zhang, Y., & Zhao, W. (2017). High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (pp. 305-307). Article 8085325 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2017-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD.2017.8085325

Gao, Tianqi ; Zeng, Lang ; Zhang, Deming et al. / High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect. 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 305-307 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{080f1977602e498480e7fa7ffb2b008e,

title = "High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect",

abstract = "In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme has been proposed, which reduces the energy consumption effectively as well as accelerates switching process.",

keywords = "all spin logic device, negative capacitance, voltage controlled magnetic anisotropy",

author = "Tianqi Gao and Lang Zeng and Deming Zhang and Xiaowan Qin and Mingzhi Long and Youguang Zhang and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.; 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 ; Conference date: 07-09-2017 Through 09-09-2017",

year = "2017",

month = oct,

day = "25",

doi = "10.23919/SISPAD.2017.8085325",

language = "英语",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "305--307",

booktitle = "2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017",

address = "美国",

}

Gao, T, Zeng, L , Zhang, D, Qin, X, Long, M, Zhang, Y & Zhao, W 2017, High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect. in 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017., 8085325, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2017-September, Institute of Electrical and Electronics Engineers Inc., pp. 305-307, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, Kamakura, Japan, 7/09/17. https://doi.org/10.23919/SISPAD.2017.8085325

High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect. / Gao, Tianqi; Zeng, Lang ; Zhang, Deming et al.
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 305-307 8085325 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2017-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

AU - Gao, Tianqi

AU - Zeng, Lang

AU - Zhang, Deming

AU - Qin, Xiaowan

AU - Long, Mingzhi

AU - Zhang, Youguang

AU - Zhao, Weisheng

PY - 2017/10/25

Y1 - 2017/10/25

N2 - In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme has been proposed, which reduces the energy consumption effectively as well as accelerates switching process.

AB - In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme has been proposed, which reduces the energy consumption effectively as well as accelerates switching process.

KW - all spin logic device

KW - negative capacitance

KW - voltage controlled magnetic anisotropy

UR - https://www.scopus.com/pages/publications/85039041337

U2 - 10.23919/SISPAD.2017.8085325

DO - 10.23919/SISPAD.2017.8085325

M3 - 会议稿件

AN - SCOPUS:85039041337

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 305

EP - 307

BT - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017

Y2 - 7 September 2017 through 9 September 2017

ER -

Gao T, Zeng L , Zhang D, Qin X, Long M, Zhang Y et al. High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 305-307. 8085325. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD.2017.8085325

High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect

Abstract

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UN SDGs

Keywords

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