High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance

Hua Min Li; Tian Zi Shen; Dae Yeong Lee; Won Jong Yoo

doi:10.1109/IEDM.2012.6479096

High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance

Hua Min Li^*
, Tian Zi Shen
, Dae Yeong Lee
, Won Jong Yoo

^*Corresponding author for this work

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Two approaches, graphene stack (GS) structure assembled by layer-by-layer (LBL) transfer and trap assistant technique for single-layer graphene (SLG), are applied to field-effect transistors (FETs) for photodetection. In LBL-GS-FET, about 3.6 times increased photocurrent (PC) together with increased internal/external quantum efficiency (IQE/EQE) is obtained compared to the conventional SLG-FET, owing to an improvement of both electrical transport and optical absorption. In trap-assisted SLG-FET, the PC over 12% compared to the dark current with the superior photo-responsivity (S) of 2.8 mA/W and the IQE/EQE of 23.0%/ 0.5% is obtained, due to the different response of trapping effect in dark and illumination environments.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	24.5.1-24.5.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479096
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

Access to Document

10.1109/IEDM.2012.6479096

Cite this

Li, H. M., Shen, T. Z., Lee, D. Y., & Yoo, W. J. (2012). High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 24.5.1-24.5.4). Article 6479096 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479096

@inproceedings{8ac529ea0d4a4599b173f30db7adbfda,

title = "High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance",

abstract = "Two approaches, graphene stack (GS) structure assembled by layer-by-layer (LBL) transfer and trap assistant technique for single-layer graphene (SLG), are applied to field-effect transistors (FETs) for photodetection. In LBL-GS-FET, about 3.6 times increased photocurrent (PC) together with increased internal/external quantum efficiency (IQE/EQE) is obtained compared to the conventional SLG-FET, owing to an improvement of both electrical transport and optical absorption. In trap-assisted SLG-FET, the PC over 12\% compared to the dark current with the superior photo-responsivity (S) of 2.8 mA/W and the IQE/EQE of 23.0\%/ 0.5\% is obtained, due to the different response of trapping effect in dark and illumination environments.",

author = "Li, \{Hua Min\} and Shen, \{Tian Zi\} and Lee, \{Dae Yeong\} and Yoo, \{Won Jong\}",

year = "2012",

doi = "10.1109/IEDM.2012.6479096",

language = "英语",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "24.5.1--24.5.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Li, HM, Shen, TZ, Lee, DY & Yoo, WJ 2012, High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479096, Technical Digest - International Electron Devices Meeting, IEDM, pp. 24.5.1-24.5.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479096

High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance. / Li, Hua Min; Shen, Tian Zi; Lee, Dae Yeong et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 24.5.1-24.5.4 6479096 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance

AU - Li, Hua Min

AU - Shen, Tian Zi

AU - Lee, Dae Yeong

AU - Yoo, Won Jong

PY - 2012

Y1 - 2012

N2 - Two approaches, graphene stack (GS) structure assembled by layer-by-layer (LBL) transfer and trap assistant technique for single-layer graphene (SLG), are applied to field-effect transistors (FETs) for photodetection. In LBL-GS-FET, about 3.6 times increased photocurrent (PC) together with increased internal/external quantum efficiency (IQE/EQE) is obtained compared to the conventional SLG-FET, owing to an improvement of both electrical transport and optical absorption. In trap-assisted SLG-FET, the PC over 12% compared to the dark current with the superior photo-responsivity (S) of 2.8 mA/W and the IQE/EQE of 23.0%/ 0.5% is obtained, due to the different response of trapping effect in dark and illumination environments.

AB - Two approaches, graphene stack (GS) structure assembled by layer-by-layer (LBL) transfer and trap assistant technique for single-layer graphene (SLG), are applied to field-effect transistors (FETs) for photodetection. In LBL-GS-FET, about 3.6 times increased photocurrent (PC) together with increased internal/external quantum efficiency (IQE/EQE) is obtained compared to the conventional SLG-FET, owing to an improvement of both electrical transport and optical absorption. In trap-assisted SLG-FET, the PC over 12% compared to the dark current with the superior photo-responsivity (S) of 2.8 mA/W and the IQE/EQE of 23.0%/ 0.5% is obtained, due to the different response of trapping effect in dark and illumination environments.

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DO - 10.1109/IEDM.2012.6479096

M3 - 会议稿件

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SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 24.5.1-24.5.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

High photocurrent and quantum efficiency of graphene photodetector using layer-by-layer stack structure and trap assistance

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