High performance SoC design using magnetic logic and memory

Weisheng Zhao; Lionel Torres; Luís Vitório Cargnini; Raphael Martins Brum; Yue Zhang; Yoann Guillemenet; Gilles Sassatelli; Yahya Lakys; Jacques Olivier Klein; Daniel Etiemble; Dafiné Ravelosona; Claude Chappert

doi:10.1007/978-3-642-32770-4_2

High performance SoC design using magnetic logic and memory

Weisheng Zhao^*
, Lionel Torres
, Luís Vitório Cargnini
, Raphael Martins Brum
, Yue Zhang
, Yoann Guillemenet
, Gilles Sassatelli
, Yahya Lakys
, Jacques Olivier Klein
, Daniel Etiemble
, Dafiné Ravelosona
, Claude Chappert

^*Corresponding author for this work

Université Paris-Saclay
University of Montpellier
CNRS

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.

Original language	English
Title of host publication	VLSI-SoC
Subtitle of host publication	Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers
Publisher	Springer New York LLC
Pages	10-33
Number of pages	24
ISBN (Print)	9783642327698
DOIs	https://doi.org/10.1007/978-3-642-32770-4_2
State	Published - 2012
Externally published	Yes
Event	19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011 - Hong Kong, China Duration: 3 Oct 2011 → 5 Oct 2011

Publication series

Name	IFIP Advances in Information and Communication Technology
Volume	379 AICT
ISSN (Print)	1868-4238

Conference

Conference	19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011
Country/Territory	China
City	Hong Kong
Period	3/10/11 → 5/10/11

Keywords

MRAM
Magnetic Logic
Non-volatile CPU
Reconfigurable logic

Access to Document

10.1007/978-3-642-32770-4_2

Cite this

Zhao, W., Torres, L., Cargnini, L. V., Brum, R. M., Zhang, Y., Guillemenet, Y., Sassatelli, G., Lakys, Y., Klein, J. O., Etiemble, D., Ravelosona, D., & Chappert, C. (2012). High performance SoC design using magnetic logic and memory. In VLSI-SoC: Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers (pp. 10-33). (IFIP Advances in Information and Communication Technology; Vol. 379 AICT). Springer New York LLC. https://doi.org/10.1007/978-3-642-32770-4_2

Zhao, Weisheng ; Torres, Lionel ; Cargnini, Luís Vitório et al. / High performance SoC design using magnetic logic and memory. VLSI-SoC: Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers. Springer New York LLC, 2012. pp. 10-33 (IFIP Advances in Information and Communication Technology).

@inproceedings{73040d43dd5648d9a4aa332f180ae310,

title = "High performance SoC design using magnetic logic and memory",

abstract = "As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.",

keywords = "MRAM, Magnetic Logic, Non-volatile CPU, Reconfigurable logic",

author = "Weisheng Zhao and Lionel Torres and Cargnini, \{Lu{\'i}s Vit{\'o}rio\} and Brum, \{Raphael Martins\} and Yue Zhang and Yoann Guillemenet and Gilles Sassatelli and Yahya Lakys and Klein, \{Jacques Olivier\} and Daniel Etiemble and Dafin{\'e} Ravelosona and Claude Chappert",

year = "2012",

doi = "10.1007/978-3-642-32770-4\_2",

language = "英语",

isbn = "9783642327698",

series = "IFIP Advances in Information and Communication Technology",

publisher = "Springer New York LLC",

pages = "10--33",

booktitle = "VLSI-SoC",

note = "19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011 ; Conference date: 03-10-2011 Through 05-10-2011",

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Zhao, W, Torres, L, Cargnini, LV, Brum, RM, Zhang, Y, Guillemenet, Y, Sassatelli, G, Lakys, Y, Klein, JO, Etiemble, D, Ravelosona, D & Chappert, C 2012, High performance SoC design using magnetic logic and memory. in VLSI-SoC: Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers. IFIP Advances in Information and Communication Technology, vol. 379 AICT, Springer New York LLC, pp. 10-33, 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Hong Kong, China, 3/10/11. https://doi.org/10.1007/978-3-642-32770-4_2

High performance SoC design using magnetic logic and memory. / Zhao, Weisheng; Torres, Lionel; Cargnini, Luís Vitório et al.
VLSI-SoC: Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers. Springer New York LLC, 2012. p. 10-33 (IFIP Advances in Information and Communication Technology; Vol. 379 AICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance SoC design using magnetic logic and memory

AU - Zhao, Weisheng

AU - Torres, Lionel

AU - Cargnini, Luís Vitório

AU - Brum, Raphael Martins

AU - Zhang, Yue

AU - Guillemenet, Yoann

AU - Sassatelli, Gilles

AU - Lakys, Yahya

AU - Klein, Jacques Olivier

AU - Etiemble, Daniel

AU - Ravelosona, Dafiné

AU - Chappert, Claude

PY - 2012

Y1 - 2012

N2 - As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.

AB - As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.

KW - MRAM

KW - Magnetic Logic

KW - Non-volatile CPU

KW - Reconfigurable logic

UR - https://www.scopus.com/pages/publications/84870711039

U2 - 10.1007/978-3-642-32770-4_2

DO - 10.1007/978-3-642-32770-4_2

M3 - 会议稿件

AN - SCOPUS:84870711039

SN - 9783642327698

T3 - IFIP Advances in Information and Communication Technology

SP - 10

EP - 33

BT - VLSI-SoC

PB - Springer New York LLC

T2 - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011

Y2 - 3 October 2011 through 5 October 2011

ER -

Zhao W, Torres L, Cargnini LV, Brum RM, Zhang Y, Guillemenet Y et al. High performance SoC design using magnetic logic and memory. In VLSI-SoC: Advanced Research for Systems on Chip - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011, Revised Selected Papers. Springer New York LLC. 2012. p. 10-33. (IFIP Advances in Information and Communication Technology). doi: 10.1007/978-3-642-32770-4_2

High performance SoC design using magnetic logic and memory

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Keywords

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