High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

Zhi Tao; Yi an Huang; Xiang Liu; Jing Chen; Wei Lei; Xiaofeng Wang; Lingfeng Pan; Jiangyong Pan; Qianqian Huang; Zichen Zhang

doi:10.1007/s40820-016-0083-7

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

Zhi Tao
, Yi an Huang
, Xiang Liu
, Jing Chen
, Wei Lei^*
, Xiaofeng Wang
, Lingfeng Pan
, Jiangyong Pan
, Qianqian Huang
, Zichen Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W⁻¹ and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

Original language	English
Pages (from-to)	247-253
Number of pages	7
Journal	Nano-Micro Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1007/s40820-016-0083-7
State	Published - 1 Jul 2016
Externally published	Yes

Keywords

Quantum dots
Reduced graphene oxide
Thin-film transistor
ZnO nanowires

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10.1007/s40820-016-0083-7

Cite this

@article{7e259beb18864f04b1eba55ca4bb8bc3,

title = "High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires",

abstract = "In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W−1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.",

keywords = "Quantum dots, Reduced graphene oxide, Thin-film transistor, ZnO nanowires",

author = "Zhi Tao and Huang, \{Yi an\} and Xiang Liu and Jing Chen and Wei Lei and Xiaofeng Wang and Lingfeng Pan and Jiangyong Pan and Qianqian Huang and Zichen Zhang",

note = "Publisher Copyright: {\textcopyright} 2016, The Author(s).",

year = "2016",

month = jul,

day = "1",

doi = "10.1007/s40820-016-0083-7",

language = "英语",

volume = "8",

pages = "247--253",

journal = "Nano-Micro Letters",

issn = "2311-6706",

publisher = "Open Access Science Online",

number = "3",

}

TY - JOUR

T1 - High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

AU - Tao, Zhi

AU - Huang, Yi an

AU - Liu, Xiang

AU - Chen, Jing

AU - Lei, Wei

AU - Wang, Xiaofeng

AU - Pan, Lingfeng

AU - Pan, Jiangyong

AU - Huang, Qianqian

AU - Zhang, Zichen

PY - 2016/7/1

Y1 - 2016/7/1

N2 - In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W−1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

AB - In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W−1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

KW - Quantum dots

KW - Reduced graphene oxide

KW - Thin-film transistor

KW - ZnO nanowires

UR - https://www.scopus.com/pages/publications/84973402535

U2 - 10.1007/s40820-016-0083-7

DO - 10.1007/s40820-016-0083-7

M3 - 文章

AN - SCOPUS:84973402535

SN - 2311-6706

VL - 8

SP - 247

EP - 253

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 3

ER -

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

Abstract

Keywords

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