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Hierarchical Structure Control and Unconventional Thermal Response of Excitonic Emission in a Superatomic Semiconductor

  • Zeya Li*
  • , Zian Xu
  • , Lingyi Ao
  • , Peng Chen
  • , Qizheng Sun
  • , Huihui Ding
  • , Zichen Wang
  • , Siyu Duan
  • , Xiangyu Bi
  • , Ling Zhou
  • , Qing Li*
  • , Chin Shen Ong
  • , Peizhe Tang*
  • , Hongtao Yuan*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Electron–phonon interactions play a pivotal role in determining the electronic and optical properties of quantum materials. Generally, electron–phonon coupling increases as the chemical bonds shorten because those closer atoms normally have larger orbital overlap. Unlike conventional crystals, superatomic hierarchical crystals, assembled from 0D clusters (“superatomic”) with strong intra-cluster bonding and relatively-weak inter-cluster bonding (“hierarchical”), exhibit unconventional lattice responses to the external stimuli such as pressure or heating, thus providing an interesting material platform to tune electron–phonon interactions. Herein, a highly-tunable excitonic renormalization is demonstrated with temperature coefficients transitioning from negative to positive in superatomic crystal Re6Se8Cl2 under pressure. Note that such an anomalous positive temperature coefficient, in sharp contrast with the negative one in pristine Re6Se8Cl2, is seldom realized in conventional semiconductors. First-principles calculations reveal that, the inter-cluster bonds stiffness under pressure, which effectively weakens electron–phonon coupling and reduces its contribution to the bandgap evolution behavior with heating, results in the positive temperature coefficient in exciton emission under pressure. This work demonstrates that pressurized superatomic crystals, with tunable hierarchical structures and insensitivity of bandgap on heating, offers a new material platform for exploration of emergent phonon-mediated phenomena toward optoelectronic and energy-harvesting devices.

Original languageEnglish
Article numbere23687
JournalAdvanced Functional Materials
Volume36
Issue number20
DOIs
StatePublished - 9 Mar 2026

Keywords

  • electron–phonon interactions
  • excitonic renormalization
  • first-principles calculations
  • hierarchical structural engineering
  • superatomic semiconductors

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