@inproceedings{ddf17d9ef335414bad1f3c4ed9c40904,
title = "Hardening techniques for MRAM-based non-volatile storage cells and logic",
abstract = "Magnetic RAM (MRAM) is considered as a promising non-volatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spin direction {"}up{"} and {"}down{"} of electrons instead of positive and negative charge. However, MRAM-based non-volatile storage cells and logic circuits are vulnerable to Single Event Effects (SEE) due to their CMOS peripheral circuits. Hardening techniques to mitigate SEE are presented in this paper. A new design of Radhard MRAM latch is firstly presented. TMR technique is then implemented on Configurable Logic Block to mitigate SET on data paths. By using 65nm design kit and an MRAM compact model, hybrid simulations have been done to demonstrate the radiation hardness.",
keywords = "MRAM, Multi-context, Non-Volatile, Radiation Hardness by Design, SEU, Spintronics",
author = "Y. Lakys and Zhao, \{W. S.\} and Klein, \{J. O.\} and C. Chappert",
year = "2011",
doi = "10.1109/RADECS.2011.6131445",
language = "英语",
isbn = "9781457705878",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
pages = "669--674",
booktitle = "RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings",
note = "12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 ; Conference date: 19-09-2011 Through 23-09-2011",
}