@inproceedings{c829d94621734d7cb8e6f65092580406,
title = "Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit",
abstract = "In power conversion applications using GaN HEMT with high switching frequency, switching loss dominates in total power loss and could be very sensitive to parasitic parameters as a result of fast-switching operation. Since conventional switching loss calculation formula suffers from inconsistent error in designs with GaN HEMTs and various conditions, it is desirable to have effective ways for more accurate estimation on switching loss of GaN HEMT. In this paper, two different kinds of switching loss calculation model are developed in forms of both empirical formula and analytical model, taking into account the effect of critical parasitic inductances and junction temperature. The comparison results of two calculation methods with traditional calculation method are presented for the effectiveness of models. Moreover, the effect of nonideal parameters, such as power loop parasitic inductance, common-source inductance and junction temperature are evaluated.",
keywords = "GaN HEMT, Switching loss, analytical model, empirical formula, fast-switching",
author = "Yushan Liu and Jianyu Cao and Xiao Li and Yupeng Liu",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023 ; Conference date: 16-10-2023 Through 19-10-2023",
year = "2023",
doi = "10.1109/IECON51785.2023.10312125",
language = "英语",
series = "IECON Proceedings (Industrial Electronics Conference)",
publisher = "IEEE Computer Society",
booktitle = "IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society",
address = "美国",
}