Growth mechanism of CVD oriented boron nitride films

B. Wang; M. Wang; S. J. Zhang; A. P. Huang; D. X. ZHang; Q. Zhao; H. Zhou; H. Yan

Growth mechanism of CVD oriented boron nitride films

B. Wang
, M. Wang
, S. J. Zhang
, A. P. Huang
, D. X. ZHang
, Q. Zhao
, H. Zhou
, H. Yan^*

^*Corresponding author for this work

Beijing University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Oriented hexagonal BN (h-BN) films with (0002) basal plane lying on Si(100) substrates were prepared both by microwave electron cyclotron resonance (MW-ECR) CVD and radio frequency plasma enhanced CVD (PECVD). Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that in this case the absorption peak of the B-N bonds in-plane stretching mode was activated, while that of the B-N-B bonds out-of-plane mode was not activated. X-ray diffraction (XRD) results showed the unique diffraction of the basal plane. Moreover, it was also evidenced that the typical hexagonal morphology of the oriented h-BN film is acquired by Atomic Force Microscopy (AFM). The orientation driver force in MW-ECR-CVD was the negative bias applied to the substrate, while in PECVD it was the reactive temperature.

Original language	English
Title of host publication	Mechanics and Material Engineering for Science and Experiments
Editors	Y. Zhou, Y. Ghu, Z. Li, Y. Zhou, Y. Gu, Z. Li
Pages	308-311
Number of pages	4
State	Published - 2003
Externally published	Yes
Event	Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments - Changsha/Zhangjiajie, China Duration: 11 Aug 2001 → 16 Aug 2001

Publication series

Name	Mechanics and Material Engineering for Science and Experiments

Conference

Conference	Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments
Country/Territory	China
City	Changsha/Zhangjiajie
Period	11/08/01 → 16/08/01

Keywords

BN films
ECR
Negative bias
Orientation
PECVD
Substrate temperature

Cite this

@inproceedings{5b99a0bbcc7c41098b6e800842689d37,

title = "Growth mechanism of CVD oriented boron nitride films",

abstract = "Oriented hexagonal BN (h-BN) films with (0002) basal plane lying on Si(100) substrates were prepared both by microwave electron cyclotron resonance (MW-ECR) CVD and radio frequency plasma enhanced CVD (PECVD). Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that in this case the absorption peak of the B-N bonds in-plane stretching mode was activated, while that of the B-N-B bonds out-of-plane mode was not activated. X-ray diffraction (XRD) results showed the unique diffraction of the basal plane. Moreover, it was also evidenced that the typical hexagonal morphology of the oriented h-BN film is acquired by Atomic Force Microscopy (AFM). The orientation driver force in MW-ECR-CVD was the negative bias applied to the substrate, while in PECVD it was the reactive temperature.",

keywords = "BN films, ECR, Negative bias, Orientation, PECVD, Substrate temperature",

author = "B. Wang and M. Wang and Zhang, \{S. J.\} and Huang, \{A. P.\} and ZHang, \{D. X.\} and Q. Zhao and H. Zhou and H. Yan",

year = "2003",

language = "英语",

isbn = "1880132796",

series = "Mechanics and Material Engineering for Science and Experiments",

pages = "308--311",

editor = "Y. Zhou and Y. Ghu and Z. Li and Y. Zhou and Y. Gu and Z. Li",

booktitle = "Mechanics and Material Engineering for Science and Experiments",

note = "Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments ; Conference date: 11-08-2001 Through 16-08-2001",

}

Wang, B, Wang, M, Zhang, SJ, Huang, AP, ZHang, DX, Zhao, Q, Zhou, H & Yan, H 2003, Growth mechanism of CVD oriented boron nitride films. in Y Zhou, Y Ghu, Z Li, Y Zhou, Y Gu & Z Li (eds), Mechanics and Material Engineering for Science and Experiments. Mechanics and Material Engineering for Science and Experiments, pp. 308-311, Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments, Changsha/Zhangjiajie, China, 11/08/01.

Growth mechanism of CVD oriented boron nitride films. / Wang, B.; Wang, M.; Zhang, S. J. et al.
Mechanics and Material Engineering for Science and Experiments. ed. / Y. Zhou; Y. Ghu; Z. Li; Y. Zhou; Y. Gu; Z. Li. 2003. p. 308-311 (Mechanics and Material Engineering for Science and Experiments).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth mechanism of CVD oriented boron nitride films

AU - Wang, B.

AU - Wang, M.

AU - Zhang, S. J.

AU - Huang, A. P.

AU - ZHang, D. X.

AU - Zhao, Q.

AU - Zhou, H.

AU - Yan, H.

PY - 2003

Y1 - 2003

N2 - Oriented hexagonal BN (h-BN) films with (0002) basal plane lying on Si(100) substrates were prepared both by microwave electron cyclotron resonance (MW-ECR) CVD and radio frequency plasma enhanced CVD (PECVD). Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that in this case the absorption peak of the B-N bonds in-plane stretching mode was activated, while that of the B-N-B bonds out-of-plane mode was not activated. X-ray diffraction (XRD) results showed the unique diffraction of the basal plane. Moreover, it was also evidenced that the typical hexagonal morphology of the oriented h-BN film is acquired by Atomic Force Microscopy (AFM). The orientation driver force in MW-ECR-CVD was the negative bias applied to the substrate, while in PECVD it was the reactive temperature.

AB - Oriented hexagonal BN (h-BN) films with (0002) basal plane lying on Si(100) substrates were prepared both by microwave electron cyclotron resonance (MW-ECR) CVD and radio frequency plasma enhanced CVD (PECVD). Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that in this case the absorption peak of the B-N bonds in-plane stretching mode was activated, while that of the B-N-B bonds out-of-plane mode was not activated. X-ray diffraction (XRD) results showed the unique diffraction of the basal plane. Moreover, it was also evidenced that the typical hexagonal morphology of the oriented h-BN film is acquired by Atomic Force Microscopy (AFM). The orientation driver force in MW-ECR-CVD was the negative bias applied to the substrate, while in PECVD it was the reactive temperature.

KW - BN films

KW - ECR

KW - Negative bias

KW - Orientation

KW - PECVD

KW - Substrate temperature

UR - https://www.scopus.com/pages/publications/0141894351

M3 - 会议稿件

AN - SCOPUS:0141894351

SN - 1880132796

T3 - Mechanics and Material Engineering for Science and Experiments

SP - 308

EP - 311

BT - Mechanics and Material Engineering for Science and Experiments

A2 - Zhou, Y.

A2 - Ghu, Y.

A2 - Li, Z.

A2 - Zhou, Y.

A2 - Gu, Y.

A2 - Li, Z.

T2 - Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments

Y2 - 11 August 2001 through 16 August 2001

ER -

Growth mechanism of CVD oriented boron nitride films

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Publication series

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Keywords

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