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Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO 3(110) substrates

  • Hong Liang Bai
  • , Guo Lei Liu*
  • , Shu Min He
  • , Shi Shen Yan
  • , Da Peng Zhu
  • , Hong Yu Guo
  • , Zi Wu Ji
  • , Feng Fan Yang
  • , Yan Xue Chen
  • , Liang Mo Mei
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3(STO)(110) substrates. Inclined ZnO and cobalt-doped ZnO (ZnCoO) thin films are grown on unetched STO(110) substrates using oxygen plasma assisted molecular beam epitaxy, with the c-axis 42° inclined from the normal STO(110) surface. The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001]. The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0X emissions associated with A 0X emissions, and the characteristic emissions for the 2E( 2G)→ 4A 2( 4F) transition of Co 2+ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film, indicating the incorporation of Co 2+ ions at the lattice positions of the Zn 2+ ions. The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.

Original languageEnglish
Article number057801
JournalChinese Physics B
Volume21
Issue number5
DOIs
StatePublished - May 2012
Externally publishedYes

Keywords

  • SrTiO (110)
  • inclined ZnO
  • photoluminescence

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