Growth and characteristics of ZnTe single crystal for THz technology

Reng Wang; Weizheng Fang; Pei Zhao; Lei Zhang; Jin Ge; Shixin Yuan; Huier Zhang; Shuhong Hu; Ning Dai; Xiaoshu Chen; Xiaojun Wu; Shan He; Gang Wang

Growth and characteristics of ZnTe single crystal for THz technology

Reng Wang^*
, Weizheng Fang
, Pei Zhao
, Lei Zhang
, Jin Ge
, Shixin Yuan
, Huier Zhang
, Shuhong Hu
, Ning Dai
, Xiaoshu Chen
, Xiaojun Wu
, Shan He
, Gang Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals, and (110) oriented crystals of 10 mm × 10 mm size were obtained. The transmittance is about 61% in range of 2.5-20 mm, as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24 eV. Moreover, a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti: sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18 ps and frequency bandwidth of 5 THz.

Original language	English
Pages (from-to)	940-943
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	29
Issue number	5
State	Published - May 2008
Externally published	Yes

Keywords

THz
Te-solution method
X-ray diffraction
ZnTe crystal

Cite this

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title = "Growth and characteristics of ZnTe single crystal for THz technology",

abstract = "ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals, and (110) oriented crystals of 10 mm × 10 mm size were obtained. The transmittance is about 61\% in range of 2.5-20 mm, as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24 eV. Moreover, a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti: sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18 ps and frequency bandwidth of 5 THz.",

keywords = "THz, Te-solution method, X-ray diffraction, ZnTe crystal",

author = "Reng Wang and Weizheng Fang and Pei Zhao and Lei Zhang and Jin Ge and Shixin Yuan and Huier Zhang and Shuhong Hu and Ning Dai and Xiaoshu Chen and Xiaojun Wu and Shan He and Gang Wang",

year = "2008",

month = may,

language = "英语",

volume = "29",

pages = "940--943",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "5",

}

TY - JOUR

T1 - Growth and characteristics of ZnTe single crystal for THz technology

AU - Wang, Reng

AU - Fang, Weizheng

AU - Zhao, Pei

AU - Zhang, Lei

AU - Ge, Jin

AU - Yuan, Shixin

AU - Zhang, Huier

AU - Hu, Shuhong

AU - Dai, Ning

AU - Chen, Xiaoshu

AU - Wu, Xiaojun

AU - He, Shan

AU - Wang, Gang

PY - 2008/5

Y1 - 2008/5

N2 - ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals, and (110) oriented crystals of 10 mm × 10 mm size were obtained. The transmittance is about 61% in range of 2.5-20 mm, as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24 eV. Moreover, a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti: sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18 ps and frequency bandwidth of 5 THz.

AB - ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals, and (110) oriented crystals of 10 mm × 10 mm size were obtained. The transmittance is about 61% in range of 2.5-20 mm, as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24 eV. Moreover, a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti: sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18 ps and frequency bandwidth of 5 THz.

KW - THz

KW - Te-solution method

KW - X-ray diffraction

KW - ZnTe crystal

UR - https://www.scopus.com/pages/publications/47049114727

M3 - 文章

AN - SCOPUS:47049114727

SN - 0253-4177

VL - 29

SP - 940

EP - 943

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 5

ER -

Growth and characteristics of ZnTe single crystal for THz technology

Abstract

Keywords

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