Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film

Mei Fang Zhu; Guo Chen; Huai Zhe Xu; Y. I.Qin Han; Kan Xie; Zhen Xiang Liu; Yong Tang; Pei Yi Chen

Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film

Mei Fang Zhu^*
, Guo Chen
, Huai Zhe Xu
, Y. I.Qin Han
, Kan Xie
, Zhen Xiang Liu
, Yong Tang
, Pei Yi Chen

^*Corresponding author for this work

University of Science and Technology of China
State Key Lab. Superlattices M.
CAS - Institute of Physics
Tsinghua University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Green/blue light emission with peak position around 2.3-2. 4eV at room temperature was observed from Si nanocrystals embedded in silicon-oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2. 38eV, which were independent of annealing temperature T_a. Silicon and SiO₂ phases were separated in the annealing temperature range. Both PL intensity and the amount of Si₄₊ increased repidly as T_a > 750 °C . From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiO_x network.

Original language	English
Pages (from-to)	1650-1651
Number of pages	2
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	46
Issue number	8
State	Published - 1997
Externally published	Yes

Cite this

@article{e445a4d1f88447b7bfd10c14657f3629,

title = "Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film",

abstract = "Green/blue light emission with peak position around 2.3-2. 4eV at room temperature was observed from Si nanocrystals embedded in silicon-oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2. 38eV, which were independent of annealing temperature Ta. Silicon and SiO2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si4+ increased repidly as Ta > 750 °C . From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiOx network.",

author = "Zhu, \{Mei Fang\} and Guo Chen and Xu, \{Huai Zhe\} and Han, \{Y. I.Qin\} and Kan Xie and Liu, \{Zhen Xiang\} and Yong Tang and Chen, \{Pei Yi\}",

year = "1997",

language = "英语",

volume = "46",

pages = "1650--1651",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "8",

}

TY - JOUR

T1 - Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film

AU - Zhu, Mei Fang

AU - Chen, Guo

AU - Xu, Huai Zhe

AU - Han, Y. I.Qin

AU - Xie, Kan

AU - Liu, Zhen Xiang

AU - Tang, Yong

AU - Chen, Pei Yi

PY - 1997

Y1 - 1997

N2 - Green/blue light emission with peak position around 2.3-2. 4eV at room temperature was observed from Si nanocrystals embedded in silicon-oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2. 38eV, which were independent of annealing temperature Ta. Silicon and SiO2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si4+ increased repidly as Ta > 750 °C . From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiOx network.

AB - Green/blue light emission with peak position around 2.3-2. 4eV at room temperature was observed from Si nanocrystals embedded in silicon-oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2. 38eV, which were independent of annealing temperature Ta. Silicon and SiO2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si4+ increased repidly as Ta > 750 °C . From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiOx network.

UR - https://www.scopus.com/pages/publications/0347107898

M3 - 文章

AN - SCOPUS:0347107898

SN - 1000-3290

VL - 46

SP - 1650

EP - 1651

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 8

ER -

Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film

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