GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY

Guangcun Shan; Ruguang Ma; Xinghai Zhao; Wei Huang

doi:10.1142/9789814651998_0005

GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY

Guangcun Shan^*
, Ruguang Ma
, Xinghai Zhao
, Wei Huang

^*Corresponding author for this work

City University of Hong Kong
Max Planck Institute for Chemical Physics of Solids
Nanjing Tech University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.

Original language	English
Title of host publication	Flexible Electronics
Subtitle of host publication	From Materials to Devices
Publisher	World Scientific Publishing Co.
Pages	167-188
Number of pages	22
ISBN (Electronic)	9789814651998
ISBN (Print)	9789814651981
DOIs	https://doi.org/10.1142/9789814651998_0005
State	Published - 1 Jan 2016
Externally published	Yes

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title = "GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY",

abstract = "Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.",

author = "Guangcun Shan and Ruguang Ma and Xinghai Zhao and Wei Huang",

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doi = "10.1142/9789814651998\_0005",

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AB - Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.

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PB - World Scientific Publishing Co.

ER -

GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY

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