Abstract
Based on the photoconductive effect of the semiconductive materials, the photoconductive switch was developed. When the switch biased at 4kV bias voltage is triggered by a laser pulse of 12ns in its pulse-width, an electric pulse of about 16ns in pulse-width, about 1.8kV in peak-voltage, and about 65kW in peak-power is obtained with its load resistance of 50ohm. Besides, the key technologies of the photoconductive switch such as the dark resistance, carrier life, and the contact resistance etc were also described.
| Original language | English |
|---|---|
| Pages (from-to) | 146-149 |
| Number of pages | 4 |
| Journal | Jiguang Jishu/Laser Technology |
| Volume | 19 |
| Issue number | 3 |
| State | Published - Jun 1995 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of 'Generation of the ultrashort, high-voltage and high-power electrical pulse through using a photoconductive switch'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver