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Gate-tunable subband degeneracy in semiconductor nanowires

  • Yuhao Wang
  • , Wenyu Song
  • , Zhan Cao
  • , Zehao Yu
  • , Shuai Yang
  • , Zonglin Li
  • , Yichun Gao
  • , Ruidong Li
  • , Fangting Chen
  • , Zuhan Geng
  • , Lining Yang
  • , Jiaye Xu
  • , Zhaoyu Wang
  • , Shan Zhang
  • , Xiao Feng
  • , Tiantian Wang
  • , Yunyi Zang
  • , Lin Li
  • , Runan Shang
  • , Qi Kun Xue
  • Dong E. Liu, Ke He*, Hao Zhang*
*Corresponding author for this work
  • Tsinghua University
  • Beijing Academy of Quantum Information Sciences
  • Frontier Science Center for Quantum Information
  • Hefei National Laboratory
  • Southern University of Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.

Original languageEnglish
Article numbere2406884121
JournalProceedings of the National Academy of Sciences of the United States of America
Volume121
Issue number27
DOIs
StatePublished - 1 Jul 2024
Externally publishedYes

Keywords

  • degeneracy
  • semiconductor nanowires
  • symmetry

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