Gate-Source Voltage Peak Analysis and Prediction of eGaN HEMT in Turn-On Switching Transient

GaN HEMTs are gaining widespread adoption for their fast switching capabilities. Different from Si and SiC devices, enhanced-mode GaN HEMTs have lower gate voltage ratings and narrower safe operating margins, making them more susceptible to gate-source voltage oscillations. Moreover, instant overshoots caused by fast switching operation with high di/dt and dv/dt rates can lead to extreme voltage peaks. This paper proposes a novel analytical method to predict gate oscillations and voltage peaks in eGaN HEMTs switching transients. By modeling the signal flow relationships, the gate-source voltage compositions in two distinct cases are quantitatively analyzed. And the synthesis of the two compositions is analyzed to derive a comprehensive predictive solution. Experimental tests conducted under various conditions verify the effectiveness and accuracy of proposed method.