GaAs-based MOEMS tunable RCE photodetector with single cantilever beam

Zhen Zhou; Qin Han; Yun Du; Xiaohong Yang; Ronghan Wu; Yongqing Huang; Xiaomin Ren

GaAs-based MOEMS tunable RCE photodetector with single cantilever beam

Zhen Zhou^*
, Qin Han
, Yun Du
, Xiaohong Yang
, Ronghan Wu
, Yongqing Huang
, Xiaomin Ren

^*Corresponding author for this work

Beijing University of Posts and Telecommunications
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

Abstract

A GaAs-based micro-opto-electro-mechanical-systems (MOEMS) tunable resonant cavity enhanced (RCE) photodetector with a continuous tuning range of 31 nm under a 6 V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8% respectively. The maximum and minimum full-width-at-half-maximum (FWHM) are 20 nm and 14 nm, respectively. The dark current density is 7.46 A/m² without bias.

Original language	English
Pages (from-to)	1087-1093
Number of pages	7
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	6
State	Published - Jun 2005
Externally published	Yes

Keywords

GaAs
MOEMS
Photodetector
RCE
Single cantilever beam
Tuning

Cite this

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title = "GaAs-based MOEMS tunable RCE photodetector with single cantilever beam",

abstract = "A GaAs-based micro-opto-electro-mechanical-systems (MOEMS) tunable resonant cavity enhanced (RCE) photodetector with a continuous tuning range of 31 nm under a 6 V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9\% and 30.8\% respectively. The maximum and minimum full-width-at-half-maximum (FWHM) are 20 nm and 14 nm, respectively. The dark current density is 7.46 A/m2 without bias.",

keywords = "GaAs, MOEMS, Photodetector, RCE, Single cantilever beam, Tuning",

author = "Zhen Zhou and Qin Han and Yun Du and Xiaohong Yang and Ronghan Wu and Yongqing Huang and Xiaomin Ren",

year = "2005",

month = jun,

language = "英语",

volume = "26",

pages = "1087--1093",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "6",

}

TY - JOUR

T1 - GaAs-based MOEMS tunable RCE photodetector with single cantilever beam

AU - Zhou, Zhen

AU - Han, Qin

AU - Du, Yun

AU - Yang, Xiaohong

AU - Wu, Ronghan

AU - Huang, Yongqing

AU - Ren, Xiaomin

PY - 2005/6

Y1 - 2005/6

N2 - A GaAs-based micro-opto-electro-mechanical-systems (MOEMS) tunable resonant cavity enhanced (RCE) photodetector with a continuous tuning range of 31 nm under a 6 V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8% respectively. The maximum and minimum full-width-at-half-maximum (FWHM) are 20 nm and 14 nm, respectively. The dark current density is 7.46 A/m2 without bias.

AB - A GaAs-based micro-opto-electro-mechanical-systems (MOEMS) tunable resonant cavity enhanced (RCE) photodetector with a continuous tuning range of 31 nm under a 6 V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8% respectively. The maximum and minimum full-width-at-half-maximum (FWHM) are 20 nm and 14 nm, respectively. The dark current density is 7.46 A/m2 without bias.

KW - GaAs

KW - MOEMS

KW - Photodetector

KW - RCE

KW - Single cantilever beam

KW - Tuning

UR - https://www.scopus.com/pages/publications/22344450624

M3 - 文章

AN - SCOPUS:22344450624

SN - 0253-4177

VL - 26

SP - 1087

EP - 1093

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 6

ER -

GaAs-based MOEMS tunable RCE photodetector with single cantilever beam

Abstract

Keywords

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