Flat-band voltage shift in metal-gate/high-k/Si stacks

An Ping Huang; Xiao Hu Zheng; Zhi Song Xiao; Zhi Chao Yang; Mei Wang; K. Chu Paul; Xiao Dong Yang

doi:10.1088/1674-1056/20/9/097303

Flat-band voltage shift in metal-gate/high-k/Si stacks

An Ping Huang^*
, Xiao Hu Zheng
, Zhi Song Xiao
, Zhi Chao Yang
, Mei Wang
, K. Chu Paul
, Xiao Dong Yang

^*Corresponding author for this work

School of Physics

Beihang University
City University of Hong Kong
University of Florida

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.

Original language	English
Article number	097303
Journal	Chinese Physics B
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/1674-1056/20/9/097303
State	Published - Sep 2011

Keywords

V roll-off
flat-band voltage shift
high-k dielectrics
metal gate

Access to Document

10.1088/1674-1056/20/9/097303

Cite this

@article{da0e6a00e413455cad91500d63693056,

title = "Flat-band voltage shift in metal-gate/high-k/Si stacks",

abstract = "In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.",

keywords = "V roll-off, flat-band voltage shift, high-k dielectrics, metal gate",

author = "Huang, \{An Ping\} and Zheng, \{Xiao Hu\} and Xiao, \{Zhi Song\} and Yang, \{Zhi Chao\} and Mei Wang and Paul, \{K. Chu\} and Yang, \{Xiao Dong\}",

year = "2011",

month = sep,

doi = "10.1088/1674-1056/20/9/097303",

language = "英语",

volume = "20",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Flat-band voltage shift in metal-gate/high-k/Si stacks

AU - Huang, An Ping

AU - Zheng, Xiao Hu

AU - Xiao, Zhi Song

AU - Yang, Zhi Chao

AU - Wang, Mei

AU - Paul, K. Chu

AU - Yang, Xiao Dong

PY - 2011/9

Y1 - 2011/9

N2 - In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.

AB - In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.

KW - V roll-off

KW - flat-band voltage shift

KW - high-k dielectrics

KW - metal gate

UR - https://www.scopus.com/pages/publications/80053126265

U2 - 10.1088/1674-1056/20/9/097303

DO - 10.1088/1674-1056/20/9/097303

M3 - 文章

AN - SCOPUS:80053126265

SN - 1674-1056

VL - 20

JO - Chinese Physics B

JF - Chinese Physics B

IS - 9

M1 - 097303

ER -

Flat-band voltage shift in metal-gate/high-k/Si stacks

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this