@inproceedings{aa31e06ed24449a79074d9ab261b88f9,
title = "Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires",
abstract = "This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage VCE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.",
keywords = "Bond wires, Crack, Electric parameter, Finite element model, IGBT, Lift-off",
author = "Maogong Jiang and Guicui Fu and Lorenzo Ceccarelli and He Du and Fogsgaard, \{Martin Bendix\} and \{Sajjad Bahman\}, Amir and Yongheng Yang and Francesco Iannuzzo",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 ; Conference date: 29-09-2019 Through 03-10-2019",
year = "2019",
month = sep,
doi = "10.1109/ECCE.2019.8912236",
language = "英语",
series = "2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "839--844",
booktitle = "2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019",
address = "美国",
}