Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe₄

The development of spintronic devices based on spin–orbit torque requires the electrical-current-driven field-free switching of magnetization in materials with perpendicular magnetic anisotropy. However, approaches to achieve such switching typically require additional magnetic layers or structural engineering, which complicates fabrication processes and impedes the scalability and stability of devices. Here we report the field-free switching of the perpendicular magnetic anisotropy ferromagnet cobalt iron boron at room temperature using out-of-plane spin-polarized current generated by the Weyl semimetal tantalum iridium telluride (TaIrTe₄). Bilinear magnetoelectric resistance and spin-torque ferromagnetic resonance measurements confirm the out-of-plane polarized spins, and the out-of-plane spin canting angle is estimated to be around 8°. The spin Hall conductivity of TaIrTe₄ is estimated to be 5.44 × 10⁴ × ћ/2e (Ω m)⁻¹, which is almost one order of magnitude larger than that of tungsten ditelluride. Our results indicate that TaIrTe₄ is an efficient spin current source for field-free spin–orbit torque applications.