TY - GEN
T1 - Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability
AU - Huang, Puyang
AU - Yao, Shan
AU - Chen, Aitian
AU - Zhi, Zhenghang
AU - Fu, Chenyi
AU - Zhu, Zheng
AU - Chen, Peng
AU - Wu, Hao
AU - Wu, Di
AU - Peng, Shouzhong
AU - Yang, Yumeng
AU - Zhang, Xixiang
AU - Kou, Xufeng
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - We report a field-free switching (FFS) scheme of Rashba-type crystal torque magnetic random-access memory (CT-MRAM) based on the AlInSb/InSb/CdTe heterostructures. Benefiting from the giant interfacial Rashba spin-orbit coupling (SOC), the spin-orbit torque efficiency of the spin-generation channel (ξ = 1.5) is four times larger than the conventional heavy-metal systems, enabling an ultra-low write current density of JSW = 7.5 × 105 A/cm2 at room temperature. Moreover, the crystal torque inherited from the low-symmetry point group (3m1) not only simplifies the device structure, but also warrants a stable FFS operation over a wide temperature range from −40 ℃ to 125 ℃.
AB - We report a field-free switching (FFS) scheme of Rashba-type crystal torque magnetic random-access memory (CT-MRAM) based on the AlInSb/InSb/CdTe heterostructures. Benefiting from the giant interfacial Rashba spin-orbit coupling (SOC), the spin-orbit torque efficiency of the spin-generation channel (ξ = 1.5) is four times larger than the conventional heavy-metal systems, enabling an ultra-low write current density of JSW = 7.5 × 105 A/cm2 at room temperature. Moreover, the crystal torque inherited from the low-symmetry point group (3m1) not only simplifies the device structure, but also warrants a stable FFS operation over a wide temperature range from −40 ℃ to 125 ℃.
UR - https://www.scopus.com/pages/publications/86000032896
U2 - 10.1109/IEDM50854.2024.10873571
DO - 10.1109/IEDM50854.2024.10873571
M3 - 会议稿件
AN - SCOPUS:86000032896
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2024 IEEE International Electron Devices Meeting, IEDM 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Electron Devices Meeting, IEDM 2024
Y2 - 7 December 2024 through 11 December 2024
ER -