Fermi-level pinning in full metal/high-k/SiO2/Si stacks

Anping Huang; Xinjiang Zhang; Yue Li; Mei Wang; Zhisong Xiao

doi:10.1063/1.5005570

Fermi-level pinning in full metal/high-k/SiO₂/Si stacks

Anping Huang^*
, Xinjiang Zhang
, Yue Li
, Mei Wang
, Zhisong Xiao

^*Corresponding author for this work

School of Physics

Beihang University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Fermi-level pinning (FLP) in full Metal/High-k/SiO₂/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO₂ interlayer between the high-k layer and Si and the effects of the high-k/SiO₂/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO₂/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types.

Original language	English
Article number	195702
Journal	Journal of Applied Physics
Volume	122
Issue number	19
DOIs	https://doi.org/10.1063/1.5005570
State	Published - 21 Nov 2017

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@article{4a3f5d9399cb48ffae462d26cf026aad,

title = "Fermi-level pinning in full metal/high-k/SiO2/Si stacks",

abstract = "Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types.",

author = "Anping Huang and Xinjiang Zhang and Yue Li and Mei Wang and Zhisong Xiao",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = nov,

day = "21",

doi = "10.1063/1.5005570",

language = "英语",

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T1 - Fermi-level pinning in full metal/high-k/SiO2/Si stacks

AU - Huang, Anping

AU - Zhang, Xinjiang

AU - Li, Yue

AU - Wang, Mei

AU - Xiao, Zhisong

PY - 2017/11/21

Y1 - 2017/11/21

N2 - Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types.

AB - Fermi-level pinning (FLP) in full Metal/High-k/SiO2/Si stacks is investigated based on the improved electron state density (IESD) model. The SiO2 interlayer between the high-k layer and Si and the effects of the high-k/SiO2/Si interface on FLP are analyzed. The effective work function (EWF) is influenced by the density of states in high-k/SiO2/Si stacks with the exception of the effects of the electron state density in the metal gate. The IESD model provides physical insights and is a simple and convenient method to calculate the EWF of MOS devices with different types.

UR - https://www.scopus.com/pages/publications/85034571467

U2 - 10.1063/1.5005570

DO - 10.1063/1.5005570

M3 - 文章

AN - SCOPUS:85034571467

SN - 0021-8979

VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 19

M1 - 195702

ER -

Fermi-level pinning in full metal/high-k/SiO₂/Si stacks

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