Abstract
By mildly oxidizing Cu foil and slowing down the total gas flow rate, we develop an easily repeatable atmospheric growth method to grow single-crystal graphene of centimeter-size. The graphene edge, which is different from the previously reported straight edge, is connected by a series of graphene-corners. The graphene-corner, ranging between 100° and 110°, is formed by a zig-zag edge and a mix edge. The oxidation of Cu crystal boundaries results in the rearrangement of active Cu sites for graphene nucleation, thus suppressing graphene nucleation density.
| Original language | English |
|---|---|
| Pages (from-to) | 3530-3535 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry C |
| Volume | 3 |
| Issue number | 15 |
| DOIs | |
| State | Published - 21 Apr 2015 |
| Externally published | Yes |
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