Fabrication of 640 × 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice

  • Junbin Li
  • , Peifeng Zhang
  • , Longhua Chen
  • , Zhe Zhang
  • , Li Zhang
  • , Wei Wang
  • , Ying Su
  • , Jiankai Xue
  • , Xurui Peng
  • , Haiyan Shi
  • , Zichen Zhang*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 × 10-5 A/cm2. With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.

Original languageEnglish
Pages (from-to)631-634
Number of pages4
JournalIEEE Photonics Technology Letters
Volume38
Issue number10
DOIs
StatePublished - 2026

Keywords

  • Focal plane array (FPA)
  • long-wave infrared detector
  • type-II superlattice

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