Abstract
A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 × 10-5 A/cm2. With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.
| Original language | English |
|---|---|
| Pages (from-to) | 631-634 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 38 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2026 |
Keywords
- Focal plane array (FPA)
- long-wave infrared detector
- type-II superlattice
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