Abstract
Thin films of n-type Bi2Te3 were fabricated on glass substrates at room temperature using pulsed laser deposition. Samples were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and a physical properties measurement system. The XRD and Raman results show that crystalline films can be easily achieved at room temperature, and all films have a preferred crystal growth texture along the (0 1 5) direction. SEM indicates that the films are high-quality and smooth. The Seebeck coefficient, electrical resistivity, and magnetoresistance were measured over wide ranges of temperature and magnetic field. It was found that Seebeck coefficient of the films was significantly enhanced after annealing process.
| Original language | English |
|---|---|
| Pages (from-to) | 247-251 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 362 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2013 |
| Externally published | Yes |
Keywords
- A1. Nanostructures
- A3. Laser epitaxy
- B1. Bismuth compounds
- B2. Semiconducting materials
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