Fabrication and characterization of epitaxial ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy

Huixin Guo; Zexin Feng; Peixin Qin; Han Yan; Xiaorong Zhou; Shuai Hu; Xiaoning Wang; Xin Zhang; Haojiang Wu; Hongyu Chen; Xuepeng Qiu; Zhiqi Liu

doi:10.1007/s42247-020-00156-4

Fabrication and characterization of epitaxial ferrimagnetic Mn₃Ga thin films with perpendicular magnetic anisotropy

Huixin Guo
, Zexin Feng
, Peixin Qin
, Han Yan
, Xiaorong Zhou
, Shuai Hu
, Xiaoning Wang
, Xin Zhang
, Haojiang Wu
, Hongyu Chen
, Xuepeng Qiu
, Zhiqi Liu^*

^*Corresponding author for this work

School of Materials Science and Engineering

Beihang University
Tongji University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn₃Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn₃Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.

Original language	English
Pages (from-to)	589-595
Number of pages	7
Journal	Emergent Materials
Volume	4
Issue number	3
DOIs	https://doi.org/10.1007/s42247-020-00156-4
State	Published - Jun 2021

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Anomalous Hall effect
Electrical switching
Ferrimagnets
MnGa
Perpendicular magnetic anisotropy
Weyl points

Access to Document

10.1007/s42247-020-00156-4

Cite this

@article{5d9138b972114bdd81193170a8b79c1a,

title = "Fabrication and characterization of epitaxial ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy",

abstract = "Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn3Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.",

keywords = "Anomalous Hall effect, Electrical switching, Ferrimagnets, MnGa, Perpendicular magnetic anisotropy, Weyl points",

author = "Huixin Guo and Zexin Feng and Peixin Qin and Han Yan and Xiaorong Zhou and Shuai Hu and Xiaoning Wang and Xin Zhang and Haojiang Wu and Hongyu Chen and Xuepeng Qiu and Zhiqi Liu",

note = "Publisher Copyright: {\textcopyright} 2021, Qatar University and Springer Nature Switzerland AG.",

year = "2021",

month = jun,

doi = "10.1007/s42247-020-00156-4",

language = "英语",

volume = "4",

pages = "589--595",

journal = "Emergent Materials",

issn = "2522-5731",

publisher = "Springer Nature",

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}

TY - JOUR

T1 - Fabrication and characterization of epitaxial ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy

AU - Guo, Huixin

AU - Feng, Zexin

AU - Qin, Peixin

AU - Yan, Han

AU - Zhou, Xiaorong

AU - Hu, Shuai

AU - Wang, Xiaoning

AU - Zhang, Xin

AU - Wu, Haojiang

AU - Chen, Hongyu

AU - Qiu, Xuepeng

AU - Liu, Zhiqi

PY - 2021/6

Y1 - 2021/6

N2 - Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn3Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.

AB - Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn3Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.

KW - Anomalous Hall effect

KW - Electrical switching

KW - Ferrimagnets

KW - MnGa

KW - Perpendicular magnetic anisotropy

KW - Weyl points

UR - https://www.scopus.com/pages/publications/85107009420

U2 - 10.1007/s42247-020-00156-4

DO - 10.1007/s42247-020-00156-4

M3 - 文章

AN - SCOPUS:85107009420

SN - 2522-5731

VL - 4

SP - 589

EP - 595

JO - Emergent Materials

JF - Emergent Materials

IS - 3

ER -