Abstract
Abstract CuS/FTO counter electrode (CE) with flower-like nonosheets structure was fabricated through electro-deposition of Cu2O followed by sulfurization. This electrochemical method has better control over the morphology of CuS/FTO CE. And the application of FTO can avoid the continuous corrosion of Cu substrate in polysulfide electrolyte. Besides, through the optimization of electro-deposition, the CuS/FTO CE obtains excellent photoelectrochemical performance (photoelectric conversion efficiency (PCE) = 4.07%, fill factor (ff) = 0.50) which is much higher than Pt CE (PCE = 1.90%) and Cu2S/Cu CE (PCE = 3.76%) prepared by directly immersing copper into polysulfide electrolyte. Therefore, the CuS/FTO CE prepared by electro-deposition of Cu2O followed by sulfurization has shown much promise.
| Original language | English |
|---|---|
| Article number | 25488 |
| Pages (from-to) | 329-335 |
| Number of pages | 7 |
| Journal | Electrochimica Acta |
| Volume | 178 |
| DOIs | |
| State | Published - 25 Nov 2015 |
Keywords
- CuO
- CuS
- counter electrode
- indirect electro-deposition
- quantum dots-sensitized solar cells
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