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Fabricating CuS counter electrode for quantum dots-sensitized solar cells via electro-deposition and sulfurization of Cu2O

  • Fanxing Xi
  • , Huicong Liu
  • , Weiping Li*
  • , Liqun Zhu
  • , Huifang Geng
  • , Linlin Quan
  • , Weitao Liang
  • *Corresponding author for this work
  • Beihang University

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract CuS/FTO counter electrode (CE) with flower-like nonosheets structure was fabricated through electro-deposition of Cu2O followed by sulfurization. This electrochemical method has better control over the morphology of CuS/FTO CE. And the application of FTO can avoid the continuous corrosion of Cu substrate in polysulfide electrolyte. Besides, through the optimization of electro-deposition, the CuS/FTO CE obtains excellent photoelectrochemical performance (photoelectric conversion efficiency (PCE) = 4.07%, fill factor (ff) = 0.50) which is much higher than Pt CE (PCE = 1.90%) and Cu2S/Cu CE (PCE = 3.76%) prepared by directly immersing copper into polysulfide electrolyte. Therefore, the CuS/FTO CE prepared by electro-deposition of Cu2O followed by sulfurization has shown much promise.

Original languageEnglish
Article number25488
Pages (from-to)329-335
Number of pages7
JournalElectrochimica Acta
Volume178
DOIs
StatePublished - 25 Nov 2015

Keywords

  • CuO
  • CuS
  • counter electrode
  • indirect electro-deposition
  • quantum dots-sensitized solar cells

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