@inproceedings{e6684286742c4d9c863e7047cdf7840d,
title = "Exploring potentials of perpendicular magnetic anisotropy STT-MRAM for cache design",
abstract = "Traditional CMOS integrated circuits suffer from elevated power consumption as technology node advances. A few emerging technologies are proposed to deal with this issue. Among them, STT-MRAM is one of the most important candidates for future on-chip cache design. However, most STT-MRAM based architecture level evaluations focus on in-plane magnetic anisotropy effect. In the paper, we evaluate the most advanced perpendicular magnetic anisotropy (PMA) STT-MRAM for on-chip cache design in terms of performance, area and power consumption perspectively. The experimental results show that PMA STT-MRAM has higher power efficiency compared to SRAM as well as desirable scalability with technology node shrinking.",
author = "Xiaolong Zhang and Yuanqing Cheng and Weisheng Zhao and Youguang Zhang and Aida Todri-Sanial",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021342",
language = "英语",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "美国",
}