Experimental and finite elemental investigations on residual stress of TSV

Fei Su; Tianbao Lan; Yunhui Zhu; Jing Chen

doi:10.1109/ICEPT.2014.6922843

Experimental and finite elemental investigations on residual stress of TSV

Fei Su^*
, Tianbao Lan
, Yunhui Zhu
, Jing Chen

^*Corresponding author for this work

School of Aeronautic Science and Engineering

Beihang University
Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.

Original language	English
Title of host publication	2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014
Editors	Keyun Bi, Zhong Tian, Ziqiang Xu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1133-1137
Number of pages	5
ISBN (Electronic)	9781479947072
DOIs	https://doi.org/10.1109/ICEPT.2014.6922843
State	Published - 13 Oct 2014
Event	2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014 - Chengdu, China Duration: 12 Aug 2014 → 15 Aug 2014

Publication series

Name	Proceedings of the Electronic Packaging Technology Conference, EPTC

Conference

Conference	2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014
Country/Territory	China
City	Chengdu
Period	12/08/14 → 15/08/14

Keywords

Finite element method
Photo-elasticity
Stress
Through Silicon Via (TSV)

Access to Document

10.1109/ICEPT.2014.6922843

Cite this

Su, F., Lan, T., Zhu, Y., & Chen, J. (2014). Experimental and finite elemental investigations on residual stress of TSV. In K. Bi, Z. Tian, & Z. Xu (Eds.), 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014 (pp. 1133-1137). Article 6922843 (Proceedings of the Electronic Packaging Technology Conference, EPTC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2014.6922843

Su, Fei ; Lan, Tianbao ; Zhu, Yunhui et al. / Experimental and finite elemental investigations on residual stress of TSV. 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014. editor / Keyun Bi ; Zhong Tian ; Ziqiang Xu. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1133-1137 (Proceedings of the Electronic Packaging Technology Conference, EPTC).

@inproceedings{12f915bcc6794d37ae2888a0c543f809,

title = "Experimental and finite elemental investigations on residual stress of TSV",

abstract = "In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.",

keywords = "Finite element method, Photo-elasticity, Stress, Through Silicon Via (TSV)",

author = "Fei Su and Tianbao Lan and Yunhui Zhu and Jing Chen",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014 ; Conference date: 12-08-2014 Through 15-08-2014",

year = "2014",

month = oct,

day = "13",

doi = "10.1109/ICEPT.2014.6922843",

language = "英语",

series = "Proceedings of the Electronic Packaging Technology Conference, EPTC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1133--1137",

editor = "Keyun Bi and Zhong Tian and Ziqiang Xu",

booktitle = "2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014",

address = "美国",

}

Su, F, Lan, T, Zhu, Y & Chen, J 2014, Experimental and finite elemental investigations on residual stress of TSV. in K Bi, Z Tian & Z Xu (eds), 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014., 6922843, Proceedings of the Electronic Packaging Technology Conference, EPTC, Institute of Electrical and Electronics Engineers Inc., pp. 1133-1137, 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014, Chengdu, China, 12/08/14. https://doi.org/10.1109/ICEPT.2014.6922843

Experimental and finite elemental investigations on residual stress of TSV. / Su, Fei; Lan, Tianbao; Zhu, Yunhui et al.
2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014. ed. / Keyun Bi; Zhong Tian; Ziqiang Xu. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1133-1137 6922843 (Proceedings of the Electronic Packaging Technology Conference, EPTC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Experimental and finite elemental investigations on residual stress of TSV

AU - Su, Fei

AU - Lan, Tianbao

AU - Zhu, Yunhui

AU - Chen, Jing

PY - 2014/10/13

Y1 - 2014/10/13

N2 - In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.

AB - In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.

KW - Finite element method

KW - Photo-elasticity

KW - Stress

KW - Through Silicon Via (TSV)

UR - https://www.scopus.com/pages/publications/84908108385

U2 - 10.1109/ICEPT.2014.6922843

DO - 10.1109/ICEPT.2014.6922843

M3 - 会议稿件

AN - SCOPUS:84908108385

T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC

SP - 1133

EP - 1137

BT - 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014

A2 - Bi, Keyun

A2 - Tian, Zhong

A2 - Xu, Ziqiang

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014

Y2 - 12 August 2014 through 15 August 2014

ER -

Su F, Lan T, Zhu Y, Chen J. Experimental and finite elemental investigations on residual stress of TSV. In Bi K, Tian Z, Xu Z, editors, 2014 15th International Conference on Electronic Packaging Technology, ICEPT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1133-1137. 6922843. (Proceedings of the Electronic Packaging Technology Conference, EPTC). doi: 10.1109/ICEPT.2014.6922843

Experimental and finite elemental investigations on residual stress of TSV

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